scholarly journals Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

2013 ◽  
Vol 113 (11) ◽  
pp. 114309 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nick Wright ◽  
Anthony O'Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid Phase ◽  
Nickel Silicide ◽  
Phase Growth ◽  
Layer Graphene ◽  
Few Layer Graphene

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

2014 ◽  
Vol 778-780 ◽  
pp. 1162-1165
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nicholas Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Formation Mechanisms ◽  
Layer By Layer ◽  
Phase Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
High Temperature Stage ◽  
Few Layer Graphene

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ºC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.

scholarly journals Synthesis of Graphene on Ni/SiC Structure

2016 ◽  
Vol 67 (2) ◽  
pp. 149-151 ◽  
Author(s):  
Petr Machac ◽  
Tomas Hrebicek
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Scientific Community ◽  
Nickel Silicide ◽  
Promising Material ◽  
Layer Graphene ◽  
Optical And Mechanical Properties ◽  
Few Layer Graphene

Abstract graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for various applications in many branches of technique. Graphene has received much attention recently in scientific community. The contribution reports formation and characterization of few-layer graphene (FLG) films on a SiC substrate from nickel silicide supersaturated with carbon by annealing at a favourable low temperature.

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Direct Growth of Few-Layer Graphene on Silicon Carbide: Fast Deposition at Moderate Temperature

Graphene ◽  
2015 ◽  
Vol 3 (1) ◽  
pp. 44-50
Author(s):  
R. Paul ◽  
A. A. Voevodin ◽  
D. Y. Zemlyanov ◽  
A. Kumar ◽  
T. J. Asel ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Moderate Temperature ◽  
Layer Graphene ◽  
Direct Growth ◽  
Few Layer Graphene

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 629-632 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Nickel Silicide ◽  
Surface Roughening ◽  
Solid Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wet Processing ◽  
20 Nm ◽  
Few Layer Graphene

Patterned Few Layers Graphene (FLG) films were grown by local solid phase epitaxy from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on the carbon-terminated surface of 6H-SiC semi-insulating wafer followed by wet processing to remove the resulting nickel silicide. Raman spectroscopy was used to investigate both the formation and subsequent removal of nickel silicide during processing. Characterisation of the resulting FLG films was carried out by Raman spectroscopy and Atomic Force Microscopy (AFM). The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 3 monolayers for initial Ni layers varying from 3 to 20 nm thick. AFM observations revealed process-induced surface roughening in FLG films, however, electrical conductivity measurements by Transmission Line Model (TLM) structures confirmed that roughness does not compromise the film sheet resistance.

Effects of Vickers Cracks on the Mechanical Properties of Solid-phase-sintered Silicon Carbide Ceramics

2012 ◽  
Vol 27 (9) ◽  
pp. 965-969
Author(s):  
Xiao YANG ◽  
Xue-Jian LIU ◽  
Zheng-Ren HUANG ◽  
Gui-Ling LIU ◽  
Xiu-Min YAO
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Solid Phase ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Sintered Silicon

scholarly journals Properties of Silicone Rubber-Based Composites Reinforced with Few-Layer Graphene and Iron Oxide or Titanium Dioxide

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1550
Author(s):  
Vineet Kumar ◽  
Anuj Kumar ◽  
Minseok Song ◽  
Dong-Joo Lee ◽  
Sung-Soo Han ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Titanium Dioxide ◽  
Iron Oxide ◽  
Stress Relaxation ◽  
Silicone Rubber ◽  
Room Temperature ◽  
Relaxation Rates ◽  
Layer Graphene ◽  
Few Layer Graphene ◽  
Mechanical Actuation

The increasing demand for polymer composites with novel or improved properties requires novel fillers. To meet the challenges posed, nanofillers such as graphene, carbon nanotubes, and titanium dioxide (TiO2) have been used. In the present work, few-layer graphene (FLG) and iron oxide (Fe3O4) or TiO2 were used as fillers in a room-temperature-vulcanized (RTV) silicone rubber (SR) matrix. Composites were prepared by mixing RTV-SR with nanofillers and then kept for vulcanization at room temperature for 24 h. The RTV-SR composites obtained were characterized with respect to their mechanical, actuation, and magnetic properties. Fourier-transform infrared spectroscopy (FTIR) analysis was performed to investigate the composite raw materials and finished composites, and X-ray photoelectron spectroscopy (XPS) analysis was used to study composite surface elemental compositions. Results showed that mechanical properties were improved by adding fillers, and actuation displacements were dependent on the type of nanofiller used and the applied voltage. Magnetic stress-relaxation also increased with filler amount and stress-relaxation rates decreased when a magnetic field was applied parallel to the deformation axes. Thus, this study showed that the inclusion of iron oxide (Fe3O4) or TiO2 fillers in RTV-SR improves mechanical, actuation, and magnetic properties.

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

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