Direct Growth of Few-Layer Graphene on Silicon Carbide: Fast Deposition at Moderate Temperature

Graphene ◽  
2015 ◽  
Vol 3 (1) ◽  
pp. 44-50
Author(s):  
R. Paul ◽  
A. A. Voevodin ◽  
D. Y. Zemlyanov ◽  
A. Kumar ◽  
T. J. Asel ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Moderate Temperature ◽  
Layer Graphene ◽  
Direct Growth ◽  
Few Layer Graphene

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Direct growth of etch pit-free GaN crystals on few-layer graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (2) ◽  
pp. 1343-1349 ◽  
Author(s):  
Seung Jin Chae ◽  
Yong Hwan Kim ◽  
Tae Hoon Seo ◽  
Dinh Loc Duong ◽  
Seung Mi Lee ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
High Quality ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Etch Pit ◽  
Direct Growth ◽  
Metal Organic ◽  
Few Layer Graphene

We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal–organic chemical vapour deposition.

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

2010 ◽  
Vol 97 (17) ◽  
pp. 171909 ◽  
Author(s):  
A. Michon ◽  
S. Vézian ◽  
A. Ouerghi ◽  
M. Zielinski ◽  
T. Chassagne ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Layer Graphene ◽  
Direct Growth ◽  
Few Layer Graphene

Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

RSC Advances ◽  
2016 ◽  
Vol 6 (103) ◽  
pp. 101347-101352 ◽  
Author(s):  
P. Dharmaraj ◽  
P. Sundara Venkatesh ◽  
Pravin Kumar ◽  
K. Asokan ◽  
K. Jeganathan
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Simple Method ◽  
Sio2 Substrate ◽  
Precise Control ◽  
Si Substrates ◽  
Layer Graphene ◽  
Direct Fabrication ◽  
Direct Growth ◽  
Few Layer Graphene

A simple method that enables the direct fabrication of few layer graphene on SiO2/Si substrates with precise control of layer thickness by implantation of C ions is explored.

Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

Carbon ◽  
2011 ◽  
Vol 49 (7) ◽  
pp. 2522-2525 ◽  
Author(s):  
Xuli Ding ◽  
Guqiao Ding ◽  
Xiaoming Xie ◽  
Fuqiang Huang ◽  
Mianheng Jiang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Layer Graphene ◽  
Direct Growth ◽  
Few Layer Graphene

Direct growth of few-layer graphene films on SiO2substrates and their photovoltaic applications

2012 ◽  
Vol 22 (2) ◽  
pp. 411-416 ◽  
Author(s):  
Hui Bi ◽  
Shengrui Sun ◽  
Fuqiang Huang ◽  
Xiaoming Xie ◽  
Mianheng Jiang
Keyword(s):  
Layer Graphene ◽  
Graphene Films ◽  
Photovoltaic Applications ◽  
Direct Growth ◽  
Few Layer Graphene

A novel method for direct growth of a few-layer graphene on Al2O3 film

Carbon ◽  
2014 ◽  
Vol 71 ◽  
pp. 20-26 ◽  
Author(s):  
Xiangye Liu ◽  
Tianquan Lin ◽  
Mi Zhou ◽  
Hui Bi ◽  
Houlei Cui ◽  
...  
Keyword(s):  
Al2o3 Film ◽  
Layer Graphene ◽  
Direct Growth ◽  
Novel Method ◽  
Few Layer Graphene

scholarly journals Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

2013 ◽  
Vol 113 (11) ◽  
pp. 114309 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nick Wright ◽  
Anthony O'Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid Phase ◽  
Nickel Silicide ◽  
Phase Growth ◽  
Layer Graphene ◽  
Few Layer Graphene
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