Magnetoluminescence properties of Hg1−xCdxTe epitaxial layers and superlattice structures grown by metalorganic molecular beam epitaxy

1996 ◽  
Vol 25 (8) ◽  
pp. 1203-1208 ◽  
Author(s):  
T. K. Tran ◽  
A. Parikh ◽  
S. D. Pearson ◽  
B. K. Wagner ◽  
R. G. Benz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Superlattice Structures

CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 518-522 ◽  
Author(s):  
A.B.M.A. Ashrafi ◽  
H. Kumano ◽  
I. Suemune ◽  
Y.W. Ok ◽  
T.Y. Seong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs

1989 ◽  
Vol 54 (4) ◽  
pp. 335-337 ◽  
Author(s):  
H. Sugiura ◽  
R. Iga ◽  
T. Yamada ◽  
M. Yamaguchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser
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