Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy
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1997 ◽
Vol 12
(1)
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pp. 51-54
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2005 ◽
Vol 274
(3-4)
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pp. 418-424
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2018 ◽
Vol 89
(5)
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pp. 053107
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