Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

1998 ◽  
Vol 72 (16) ◽  
pp. 1984-1986 ◽  
Author(s):  
Z. A. Su ◽  
J. H. Huang ◽  
L. Z. Hsieh ◽  
W.-I. Lee
Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.


2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  

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