Vapor-liquid-solid growth of GaN nanowires by reactive sputtering of GaAs

2013 ◽  
Author(s):  
P. Mohanta ◽  
P. Chaturvedi ◽  
S. S. Major ◽  
R. S. Srinivasa
Keyword(s):  
Reactive Sputtering ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Morphology control of GaN nanowires by vapor-liquid-solid growth

2008 ◽  
Vol 5 (9) ◽  
pp. 3001-3003 ◽  
Author(s):  
Y. Inoue ◽  
A. Tajima ◽  
A. Ishida ◽  
H. Mimura
Keyword(s):  
Morphology Control ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Platinum assisted vapor-liquid-solid growth of GaN nanowires and their properties

2010 ◽  
Vol 56 (1) ◽  
pp. 100-103 ◽  
Author(s):  
Eunsoon Oh ◽  
Byoung Woo Lee ◽  
Sojung Shim ◽  
Ki-Young Lee ◽  
Hwangyou Oh ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Vapor–liquid–solid growth of serrated GaN nanowires: shape selection driven by kinetic frustration

2013 ◽  
Vol 1 (44) ◽  
pp. 7294 ◽  
Author(s):  
Zheng Ma ◽  
Dillon McDowell ◽  
Eugen Panaitescu ◽  
Albert V. Davydov ◽  
Moneesh Upmanyu ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Shape Selection ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Reassembling of Ni and Pt catalyst in the vapor–liquid–solid growth of GaN nanowires

2011 ◽  
Vol 65 (15-16) ◽  
pp. 2458-2461 ◽  
Author(s):  
Eunmi Park ◽  
Sojung Shim ◽  
Ryong Ha ◽  
Eunsoon Oh ◽  
Byoung Woo Lee ◽  
...  
Keyword(s):  
Pt Catalyst ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Vapor–Liquid–Solid Growth of Endotaxial Semiconductor Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5565-5570 ◽  
Author(s):  
Shaozhou Li ◽  
Xiao Huang ◽  
Qing Liu ◽  
Xiehong Cao ◽  
Fengwei Huo ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Direct Evidence of Mg Incorporation Pathway in Vapor–Liquid–Solid Grown p-type Nonpolar GaN Nanowires

2014 ◽  
Vol 118 (41) ◽  
pp. 24165-24172 ◽  
Author(s):  
Avinash Patsha ◽  
S. Amirthapandian ◽  
Ramanathaswamy Pandian ◽  
Santanu Bera ◽  
Anirban Bhattacharya ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
P Type ◽  
Nonpolar Gan ◽  
Vapor Liquid
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