scholarly journals Direct Evidence of Mg Incorporation Pathway in Vapor–Liquid–Solid Grown p-type Nonpolar GaN Nanowires

2014 ◽  
Vol 118 (41) ◽  
pp. 24165-24172 ◽  
Author(s):  
Avinash Patsha ◽  
S. Amirthapandian ◽  
Ramanathaswamy Pandian ◽  
Santanu Bera ◽  
Anirban Bhattacharya ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
P Type ◽  
Nonpolar Gan ◽  
Vapor Liquid

Morphology control of GaN nanowires by vapor-liquid-solid growth

2008 ◽  
Vol 5 (9) ◽  
pp. 3001-3003 ◽  
Author(s):  
Y. Inoue ◽  
A. Tajima ◽  
A. Ishida ◽  
H. Mimura
Keyword(s):  
Morphology Control ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Fabrication of GaN nanowires and nanoribbons by a catalyst assisted vapor–liquid–solid process

2007 ◽  
Vol 42 (3) ◽  
pp. 428-436 ◽  
Author(s):  
Subhajit Biswas ◽  
Soumitra Kar ◽  
Tandra Ghoshal ◽  
Vishal D. Ashok ◽  
Supriya Chakrabarti ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid

Realization ofIn SituDoped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method

2005 ◽  
Vol 44 (4B) ◽  
pp. 2161-2165 ◽  
Author(s):  
Md. Shofiqul Islam ◽  
Hiroshi Ishino ◽  
Takeshi Kawano ◽  
Hidekuni Takao ◽  
Kazuaki Sawada ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Growth Method ◽  
Vls Growth ◽  
P Type ◽  
Vapor Liquid

scholarly journals Structure, Optical Properties, and Photocatalytic Activity towards H2Generation and CO2Reduction of GaN Nanowires via Vapor-Liquid-Solid Process

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hong Pang ◽  
Lequan Liu ◽  
Shuxin Ouyang ◽  
Hua Xu ◽  
Yunxiang Li ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Hexagonal Wurtzite Structure ◽  
Blue Shift ◽  
Large Aspect Ratio ◽  
Diffuse Reflection Spectroscopy ◽  
Vapor Liquid Solid ◽  
Quantization Effect ◽  
Gan Nanowires ◽  
Scanning Transmission ◽  
Vapor Liquid

High quality single crystalline GaN nanowires with large aspect ratio (>100) are synthesized on n-type Si (111) substrate via Au-catalyzed vapor-liquid-solid process. Morphology, crystal structure, and optical property of the as-synthesized GaN nanowires are characterized by means of X-ray diffraction, scanning/transmission electron microscopy, UV-vis diffuse reflection spectroscopy, and room temperature photoluminescence. The results indicate that the as-prepared GaN nanowires with a large aspect ratio are well crystallized in the hexagonal wurtzite structure, and a slight blue shift appears in both the absorption edge and emission peak probably due to the quantization effect. Photocatalytic H2evolution over the as-prepared GaN nanowires is performed with the incorporation of Pt or Rh as the cocatalyst, exhibiting greatly enhanced capability compared to the GaN powder tested under the same conditions. Moreover, photocatalytic CO2reduction over the GaN nanowires is also successfully realized using Pt or Rh as the cocatalyst, depending on which the products show a strong selectivity inherently related to the reductive electrons transferred by cocatalyst.

Growth of GaN nanowires through a pyrolysis method with vapor–liquid–solid mechanism

2007 ◽  
Vol 201 (9-11) ◽  
pp. 5578-5581 ◽  
Author(s):  
Jie Zhan ◽  
Rujun Liu ◽  
Xiaopeng Hao ◽  
Xutang Tao ◽  
Minhua Jiang
Keyword(s):  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Pyrolysis Method ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Vapor-liquid-solid growth of GaN nanowires by reactive sputtering of GaAs

2013 ◽  
Author(s):  
P. Mohanta ◽  
P. Chaturvedi ◽  
S. S. Major ◽  
R. S. Srinivasa
Keyword(s):  
Reactive Sputtering ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 639-644 ◽  
Author(s):  
Nicolas Thierry-Jebali ◽  
Mihai Lazar ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Vapor Liquid Solid ◽  
Pin Diodes ◽  
High Doping Level ◽  
Selective Epitaxial Growth ◽  
Specific Contact ◽  
P Type ◽  
Vapor Liquid

This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6Ω.cm2have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed.

scholarly journals Self-branching in GaN Nanowires Induced by a Novel Vapor-Liquid-Solid Mechanism

2007 ◽  
Vol 1058 ◽  
Author(s):  
Chang-Yong Nam ◽  
Douglas Tham ◽  
John E. Fischer
Keyword(s):  
Chemical Vapor ◽  
Building Blocks ◽  
Direct Reaction ◽  
Vapor Liquid Solid ◽  
Practical Applications ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
And Migration ◽  
Vapor Liquid

ABSTRACTNanowires have great potential as building blocks for nanoscale electrical and optoelectronic devices. The difficulty in achieving functional and hierarchical nanowire structures poses an obstacle to realization of practical applications. While post-growth techniques such as fluidic alignment might be one solution, self-assembled structures during growth such as branches are promising for functional nanowire junction formation. In this study, we report vapor-liquid-solid (VLS) self-branching of GaN nanowires during AuPd-catalyzed chemical vapor deposition (CVD). This is distinct from branches grown by sequential catalyst seeding or vapor-solid (VS) mode. We present evidence for a VLS growth mechanism of GaN nanowires different from the well-established VLS growth of elemental wires. Here, Ga solubility in AuPd catalyst is limitless as suggested by a hypothetical pseudo-binary phase diagram, and the direct reaction between NH3 vapor and Ga in the liquid catalyst induce the nucleation and growth. The self-branching can be explained in the context of the proposed VLS scheme and migration of Ga-enriched AuPd liquid on Ga-stabilized polar surface of mother nanowires. This work is supported by DOE Grant No. DE-FG02-98ER45701.

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