A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer

2013 ◽  
Vol 102 (3) ◽  
pp. 031117 ◽  
Author(s):  
Yue Kuo ◽  
Chi-Chou Lin
Keyword(s):  
Hafnium Oxide ◽  
Dielectric Film ◽  
Light Emitting ◽  
High K ◽  
High K Dielectric

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

Effect of CF4 Plasma Pretreatment on TiO2 High-k Dielectric Film

2002 ◽  
Author(s):  
Tzu Yun Chang ◽  
Hsiao Wei Chen ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Chen Jung Wu
Keyword(s):  
Dielectric Film ◽  
High K ◽  
Plasma Pretreatment ◽  
High K Dielectric

Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high-k dielectric film HfO 2

2000 ◽  
Author(s):  
JingMin Leng ◽  
Shifang Li ◽  
Jon L. Opsal ◽  
David E. Aspnes ◽  
Byoung H. Lee ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Dielectric Film ◽  
High K ◽  
High K Dielectric

Oxide Defects of Laser-Spike-Annealed Ultrathin Hafnium-Oxide High-k Dielectric Stacks

2009 ◽  
Vol 54 (4) ◽  
pp. 1564-1568
Author(s):  
Joon Won Park ◽  
Dong Hak Kim ◽  
Haeyang Chung ◽  
D. Lim ◽  
You Min Chang
Keyword(s):  
Hafnium Oxide ◽  
High K ◽  
Oxide Defects ◽  
High K Dielectric

Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films

2009 ◽  
Vol 517 (14) ◽  
pp. 3900-3903 ◽  
Author(s):  
Woong-Sun Kim ◽  
Sang-Kyun Park ◽  
Dae-Yong Moon ◽  
Byoung-Woo Kang ◽  
Heon-Do Kim ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
High K ◽  
High K Dielectric

scholarly journals Efficient and Stable Solution-Processed Organic Light-Emitting Transistors Using a High-k Dielectric

ACS Photonics ◽  
2019 ◽  
Vol 6 (12) ◽  
pp. 3159-3165 ◽  
Author(s):  
Sungho Nam ◽  
Mujeeb Ullah Chaudhry ◽  
Kornelius Tetzner ◽  
Christopher Pearson ◽  
Chris Groves ◽  
...  
Keyword(s):  
Stable Solution ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light ◽  
High K ◽  
Light Emitting Transistors ◽  
High K Dielectric
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