Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum

2013 ◽  
Vol 31 (3) ◽  
pp. 030605 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Properties ◽  
Hafnium Oxide ◽  
High K ◽  
High K Dielectric

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Oxide Defects of Laser-Spike-Annealed Ultrathin Hafnium-Oxide High-k Dielectric Stacks

2009 ◽  
Vol 54 (4) ◽  
pp. 1564-1568
Author(s):  
Joon Won Park ◽  
Dong Hak Kim ◽  
Haeyang Chung ◽  
D. Lim ◽  
You Min Chang
Keyword(s):  
Hafnium Oxide ◽  
High K ◽  
Oxide Defects ◽  
High K Dielectric

Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films

2009 ◽  
Vol 517 (14) ◽  
pp. 3900-3903 ◽  
Author(s):  
Woong-Sun Kim ◽  
Sang-Kyun Park ◽  
Dae-Yong Moon ◽  
Byoung-Woo Kang ◽  
Heon-Do Kim ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
High K ◽  
High K Dielectric

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

2013 ◽  
Vol 178 (16) ◽  
pp. 1062-1067 ◽  
Author(s):  
A.A. Dakhel ◽  
Khalil E. Jasim ◽  
S. Cassidy ◽  
F.Z. Henari
Keyword(s):  
Dielectric Properties ◽  
Si Substrate ◽  
High K ◽  
High K Dielectric

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

2011 ◽  
Vol 679-680 ◽  
pp. 441-444 ◽  
Author(s):  
Muhammad Usman ◽  
T. Pilvi ◽  
Markku Leskelä ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
Current Voltage ◽  
High K Dielectric

Aluminum-based high-k dielectric materials have been studied for their potential use as passivation for SiC devices. Metal-insulator-semiconductor structures were prepared and their dielectric properties were analyzed using capacitance-voltage and current-voltage measurements. Atomic layer deposition was used for the deposition of dielectric layers consisting of AlN with or without a buffer layer of SiO2, and also a stack of alternating AlN and Al2O3 layers. It has been observed that AlN has a polycrystalline structure which provides leakage paths for the current through the grain boundaries. However, adding alternate amorphous layers of Al2O3 prevent this leakage and give better overall dielectric properties. It is also concluded that the breakdown of the dielectric starts from the degradation of the thin interfacial SiO2 layer.

scholarly journals Electron Microscopy of Sulfur Selenium Alloy with High –K Dielectric Properties.

2019 ◽  
Vol 25 (S2) ◽  
pp. 492-493
Author(s):  
Hector A. Calderon ◽  
Francisco C. Robles Hernandez ◽  
Pulickel M. Ajayan
Keyword(s):  
Electron Microscopy ◽  
Dielectric Properties ◽  
High K ◽  
High K Dielectric
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