Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching

2013 ◽  
Vol 102 (2) ◽  
pp. 021604 ◽  
Author(s):  
Sindhuja Sridharan ◽  
Navakanta Bhat ◽  
K. N. Bhat
Keyword(s):  
Potassium Hydroxide ◽  
Silicon Surface ◽  
Surface Texturing ◽  
Ammonium Hydroxide ◽  
Tetra Methyl Ammonium Hydroxide

SIMULATION STUDY OF CONVEX CORNER UNDERCUTTING IN KOH AND TMAH FOR A MEMS PIEZORESISTIVE ACCELEROMETER

2016 ◽  
Vol 78 (6) ◽  
Author(s):  
Norliana Yusof ◽  
Norhayati Soin ◽  
Abdullah C. W. Noorakma
Keyword(s):  
Potassium Hydroxide ◽  
Ammonium Hydroxide ◽  
Anisotropic Etching ◽  
Simulation Software ◽  
Mems Devices ◽  
Convex Corner ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Cad Simulation ◽  
Wet Anisotropic Etching ◽  
Compensation Design

Undercutting is a common problem in wet anisotropic etching. This problem in turn, influences the performance and sensitivity of MEMS devices. This paper investigates the use of corner compensation to prevent convex corner undercutting in a MEMS piezoresistive accelerometer. The Intellisuite CAD simulation software was used for designing the mask with corner compensation and for analysing wet anisotropic etching profiles in potassium hydroxide (KOH) and tetra-methyl-ammonium-hydroxide (TMAH) solutions at different concentrations and temperatures. Perfect 90 degrees corners on the proof mass  was successfully etched using a corner compensation design at etching temperature of 63 °C for KOH and 67.7 °C for TMAH with 25 wt% and 10.3 wt% concentration levels, respectively. Etching in TMAH required lower concentration level, thus making the etching process safer. However, TMAH required longer time to etch perfect convex corners compared to KOH. Nevertheless, both KOH and TMAH etchants have been successfully used to etch perfect convex corners by using the designed corner compensation mask.  

Optimization of the Process Modules for a Top-Down Silicon Nanowire Fabrication Using Optical Lithography and Orientation Dependent Etching

2012 ◽  
Vol 629 ◽  
pp. 115-121
Author(s):  
Nor F. Za’bah ◽  
Kelvin S.K. Kwa ◽  
Anthony O’Neill
Keyword(s):  
Potassium Hydroxide ◽  
Silicon Nanowire ◽  
Ammonium Hydroxide ◽  
Optical Lithography ◽  
Silicon On Insulator ◽  
Silicon Substrates ◽  
Line Edge Roughness ◽  
Top Down ◽  
Edge Roughness ◽  
Tetra Methyl Ammonium Hydroxide

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching has been developed using Silicon-on Insulator (SOI) as the starting substrate. The design of experiments for the optimization of the process flow especially on the orientation dependent etching using potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) are presented in this paper. Based on the etching experiments using silicon substrates, KOH with added isopropyl alcohol (IPA) had shown to have a consistent etch rate with acceptable silicon surface roughness as compared with its other counterparts. The concern regarding the effect of line edge roughness (LER) as a result of optical lithography was highlighted and, therefore, the optimization of the patterning procedure was also discussed and presented.

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

Silicon surface texturing by electro-deoxidation of a thin silica layer in molten salt

2010 ◽  
Vol 12 (10) ◽  
pp. 1270-1274 ◽  
Author(s):  
Eimutis Juzeliunas ◽  
Antony Cox ◽  
Derek J. Fray
Keyword(s):  
Molten Salt ◽  
Silicon Surface ◽  
Surface Texturing ◽  
Silica Layer

scholarly journals Influence of three alkalizing agents on some functional properties of cassava starch modified using epichlorohydrin

2015 ◽  
Vol 49 (2) ◽  
pp. 63-68
Author(s):  
B Daramola ◽  
EA Bamidele
Keyword(s):  
Functional Properties ◽  
Functional Property ◽  
Apparent Viscosity ◽  
Potassium Hydroxide ◽  
Room Temperature ◽  
Ammonium Hydroxide ◽  
Cassava Starch ◽  
Pasting Properties ◽  
Modified Starch ◽  
Cross Linkage

Influence of three alkalizing agents namely, potassium hydroxide (KOH) , ammonium hydroxide (NH4OH), and dimethyl sulphoxide (DMSO) during modification as modification facilitator on some functional properties of cassava starch modified using epichlorohydrin (EPI) at room temperature was studied. Assessment of the principal functional property; pasting properties and associated pasting indices of technological importance, notably peak viscosity and set back viscosity. The low peak viscosity (RVU) of the cassava EPI-modified starch ranged from 119.67-178.17; 128.50-161.17 for samples alkalized using KOH and DMSO respectively in comparison to the high peak viscosity (RVU) of the native starch. NH4OH was less effective alkalizing agent under the conditions used in this study. Cassava- EPI modified starch showed improved paste stability expressed in breakdown viscosity (RVU) values of 22.08-48.75 and 37.92-55.58 for KOH and DMSO alkalized samples respectively. Evaluation of other functional properties such as swelling power, apparent viscosity and paste clarity of the cassava-EPI modified starch showed alkaline-type dependent cross linkage activity of EPI. Assessment of all the functional properties of starch accomplished under the conditions employed in this study revealed that irrespective of concentration of EPI added, activity of alkalizing reagents is in the order: KOH>DMSO>NH4OH. DOI: http://dx.doi.org/10.3329/bjsir.v49i2.21997 Bangladesh J. Sci. Ind. Res. 49(2), 63-68, 2014

Superhydrophobic Silicon Surface with Micro/Nanocomposite Structure Formed by 2-Step Wet Etching

2013 ◽  
Vol 747 ◽  
pp. 542-546 ◽  
Author(s):  
Kensuke Nishioka ◽  
Takatoshi Yasui
Keyword(s):  
Potassium Hydroxide ◽  
Silicon Surface ◽  
Room Temperature ◽  
Isopropyl Alcohol ◽  
Alcohol Solution ◽  
Wet Etching ◽  
Nanocomposite Structure ◽  
Maximum Value ◽  
O 11 ◽  
Stain Etching

The micro/nanocomposite structure on silicon surface was formed by a simple 2-step chemical etching with a potassium hydroxide anisotropic etching and a stain etching in order to obtain a superhydrophobic silicon surface. Micro-sized pyramids structure was formed in a mixture of 3 wt.% potassium hydroxide with 8 vol.% isopropyl alcohol solution at 80C for 60 min. The formation of the nanosized structure was performed by stain etching at room temperature using nitric acid (HNO3) / hydrofluoric acid (HF) aqueous solutions. The silicon surface had the superhydrophobic surface. The contact angle was measured and the maximum value was 167o for the condition of second etching with HF : HNO3 : H2O = 11 : 1 : 3.

Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching

2002 ◽  
Vol 91 (12) ◽  
pp. 10044 ◽  
Author(s):  
F. S.-S. Chien ◽  
W.-F. Hsieh ◽  
S. Gwo ◽  
A. E. Vladar ◽  
J. A. Dagata
Keyword(s):  
Ammonium Hydroxide ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Tetra Methyl Ammonium Hydroxide

Biological treatment of TMAH (tetra-methyl ammonium hydroxide) in a full-scale TFT-LCD wastewater treatment plant

2012 ◽  
Vol 113 ◽  
pp. 303-310 ◽  
Author(s):  
Tai-Ho Hu ◽  
Liang-Ming Whang ◽  
Pao-Wen Grace Liu ◽  
Yu-Ching Hung ◽  
Hung-Wei Chen ◽  
...  
Keyword(s):  
Wastewater Treatment ◽  
Wastewater Treatment Plant ◽  
Biological Treatment ◽  
Treatment Plant ◽  
Ammonium Hydroxide ◽  
Full Scale ◽  
Tetra Methyl Ammonium Hydroxide

scholarly journals On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology

2021 ◽  
Vol 21 (4) ◽  
pp. 2472-2482
Author(s):  
Lis K. Nanver ◽  
Tihomir Knezevic ◽  
Xingyu Liu ◽  
Shivakumar D. Thammaiah ◽  
Max Krakers
Keyword(s):  
Potassium Hydroxide ◽  
Molecular Beam ◽  
Microelectromechanical Systems ◽  
Ammonium Hydroxide ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Euv Lithography ◽  
Tetramethyl Ammonium Hydroxide ◽  
The Many

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow p+n-like Si diode junctions that are both electrically and chemically very robust. They are presently used commercially in photodiode detectors for extremeultraviolet (EUV) lithography and scanning-electron-microscopy (SEM) systems. By using chemicalvapor deposition (CVD) or molecular beam epitaxy (MBE) to deposit the B, PureB diodes have been fabricated at temperatures from an optimal 700 °C to as low as 50 °C, making them both front- and back-end-of-line CMOS compatible. On Ge, near-ideal p+n-like diodes were fabricated by covering a wetting layer of Ga with a PureB capping layer (PureGaB). For GaN high electron mobility transistors (HEMTs), an Al-on-PureB gate stack was developed that promises to be a robust alternative to the conventional Ni-Au gates. In MEMS processing, PureB is a resilient nm-thin masking layer for Si micromachining with tetramethyl ammonium hydroxide (TMAH) or potassium hydroxide (KOH), and low-stress PureB membranes have also been demonstrated.

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