Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors

2013 ◽  
Vol 102 (1) ◽  
pp. 013509 ◽  
Author(s):  
Neil Baril ◽  
Curtis Billman ◽  
Patrick Maloney ◽  
Eric Nallon ◽  
Meimei Tidrow ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Dark Current ◽  
Infrared Detectors ◽  
Long Wavelength ◽  
Unipolar Barrier ◽  
Strain Layer ◽  
Strain Layer Superlattice

Effects of 63 MeV proton-irradiation on the dark-current in III-V-based, unipolar barrier infrared detectors

2019 ◽  
Vol 97 ◽  
pp. 448-455 ◽  
Author(s):  
C.P. Morath ◽  
E.A. Garduno ◽  
G.D. Jenkins ◽  
E.A. Steenbergen ◽  
V.M. Cowan
Keyword(s):  
Dark Current ◽  
Infrared Detectors ◽  
Proton Irradiation ◽  
Unipolar Barrier

Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors

2009 ◽  
Vol 105 (10) ◽  
pp. 104502 ◽  
Author(s):  
W. D. Hu ◽  
X. S. Chen ◽  
F. Yin ◽  
Z. J. Quan ◽  
Z. H. Ye ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dark Current ◽  
Infrared Detectors ◽  
Long Wavelength

Investigation of dark current mechanisms on type-II InAs/GaSb superlattice very long wavelength infrared detectors

2016 ◽  
Vol 49 (16) ◽  
pp. 165105 ◽  
Author(s):  
Xiaochao Li ◽  
Dongwei Jiang ◽  
Yong Zhang ◽  
Dongbo Wang ◽  
Qingjiang Yu ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Detectors ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Modeling of dark current suppression in unipolar barrier infrared detectors

2012 ◽  
Author(s):  
Jun Wang ◽  
Xiaoshuang Chen ◽  
Weida Hu ◽  
Yongguo Chen ◽  
Lin Wang ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Detectors ◽  
Unipolar Barrier

Dark current filtering in unipolar barrier infrared detectors

2011 ◽  
Vol 99 (12) ◽  
pp. 121112 ◽  
Author(s):  
G. R. Savich ◽  
J. R. Pedrazzani ◽  
D. E. Sidor ◽  
S. Maimon ◽  
G. W. Wicks
Keyword(s):  
Dark Current ◽  
Infrared Detectors ◽  
Unipolar Barrier

Stabilisation of Hg1-xCdxTe:Hg1-yCdyTex ≠ y) Heterointerfaces and Applications in Infra Red Devices

1990 ◽  
Vol 216 ◽  
Author(s):  
Paul A. Clifton ◽  
Paul D. Brown
Keyword(s):  
Barrier Layer ◽  
Epitaxial Layers ◽  
Long Wavelength ◽  
Long Term Stability ◽  
Novel Approach ◽  
Infra Red ◽  
Passivation Layers ◽  
Cdte Buffer ◽  
Initial Results

ABSTRACTThe interface between Hg1-xCdxTe(0 ≦ x ≦ 1) and Hg1-yCdyTe(0 ≦ y ≦ 1) epitaxial layers of different composition (x ≠ y) is unstable with regard to the intermixing of the Hg and Cd cations within the Group II sublattice. This phenomenon may give rise to long-term stability problems in HgTe-(Hg,Cd)Te superlattices and composition grading between (Hg,Cd)Te absorber layers and CdTe buffer or passivation layers in epitaxial infra red detectors. In this paper, a novel approach to the inhibition of interdiffusion in these systems is discussed. This involves the growth of an intervening ZnTe barrier layer at the heterointerface between two (Hg,Cd)Te layers. Initial results are presented which indicate the effectiveness of this technique in reducing interdiffusion in an experimental heterostructure grown by MOVPE. Some possible applications in a variety of HgTe-based long wavelength devices are discussed.

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

1995 ◽  
Vol 78 (12) ◽  
pp. 7143-7152 ◽  
Author(s):  
C. H. Grein ◽  
P. M. Young ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Carrier Lifetimes
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