Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors

2009 ◽  
Vol 105 (10) ◽  
pp. 104502 ◽  
Author(s):  
W. D. Hu ◽  
X. S. Chen ◽  
F. Yin ◽  
Z. J. Quan ◽  
Z. H. Ye ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dark Current ◽  
Infrared Detectors ◽  
Long Wavelength

Investigation of dark current mechanisms on type-II InAs/GaSb superlattice very long wavelength infrared detectors

2016 ◽  
Vol 49 (16) ◽  
pp. 165105 ◽  
Author(s):  
Xiaochao Li ◽  
Dongwei Jiang ◽  
Yong Zhang ◽  
Dongbo Wang ◽  
Qingjiang Yu ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Detectors ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

1995 ◽  
Vol 78 (12) ◽  
pp. 7143-7152 ◽  
Author(s):  
C. H. Grein ◽  
P. M. Young ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Carrier Lifetimes

Temperature dependence of the dark current in HgCdTe photodiode arrays

2005 ◽  
Author(s):  
F. F. Sizov ◽  
J. V. Gumenjuk-Sichevska ◽  
I. O. Lysiuk ◽  
V. V. Zabudsky ◽  
A. G. Golenkov ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Dark Current ◽  
Hgcdte Photodiode ◽  
Photodiode Arrays

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals Temperature Dependence of Quantum Dots-In-Well Infrared Photo Detectors (QDIPs) using Photoluminescence

2019 ◽  
Vol 8 (2S2) ◽  
pp. 254-259
Keyword(s):  
Quantum Dots ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Dark Current ◽  
Infrared Detectors ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Transitions ◽  
Inas Quantum Dots ◽  
Photo Detectors

A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a twocolor QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and longwavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dotsin-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction

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