High p-type conduction in high-Al content Mg-doped AlGaN

2013 ◽  
Vol 102 (1) ◽  
pp. 012105 ◽  
Author(s):  
Toru Kinoshita ◽  
Toshiyuki Obata ◽  
Hiroyuki Yanagi ◽  
Shin-ichiro Inoue
Keyword(s):  
Al Content ◽  
P Type ◽  
High Al Content ◽  
Type Conduction ◽  
Mg Doped

Theory of Defects, Doping, Surfaces and Interfaces in Wide Gap Nitrides

1996 ◽  
Vol 423 ◽  
Author(s):  
J. Bernholc ◽  
P. Boguslawski ◽  
E. L. Briggs ◽  
M. Buongiorno Nardelli ◽  
B. Chen ◽  
...  
Keyword(s):  
Nearest Neighbor ◽  
Group Iv ◽  
Type I ◽  
Shallow Acceptor ◽  
Surface And Interface ◽  
Al Content ◽  
Surfaces And Interfaces ◽  
High Concentrations ◽  
P Type ◽  
High Al Content

AbstractThe results of extensive theoretical studies of group IV impurities and surface and interface properties of nitrides are presented and compared with available experimental data. Among the impurities, we have considered substitutional C, Si, and Ge. CN is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. At high concentrations, it is energetically favorable for group IV impurities to form nearest-neighbor Xcation-XN pairs. Turning to surfaces, AIN is known to exhibit NEA. We find that the NEA property depends sensitively on surface reconstruction and termination. At interfaces, the strain effects on the band offsets range from 20% to 40%, depending on the substrate. The AIN/GaN/InN interfaces are all of type I, while the A10.5Ga0.5 N/A1N zinc-blende (001) interface may be of type II. Further, the calculated bulk polarizations in wurtzite AIN and GaN are -1.2 and -0.45 μC/cm2, respectively, and the interface contribution to the polarization in the GaN/AlN wurtzite multi-quantum-well is small.

Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3

2005 ◽  
Vol 86 (8) ◽  
pp. 082107 ◽  
Author(s):  
S.-R. Jeon ◽  
Z. Ren ◽  
G. Cui ◽  
J. Su ◽  
M. Gherasimova ◽  
...  
Keyword(s):  
Mg Doping ◽  
Al Content ◽  
P Type ◽  
High Al Content

Control of p-type conduction in Mg doped monophase CuCrO2thin layers

2016 ◽  
Vol 49 (20) ◽  
pp. 205107 ◽  
Author(s):  
E Chikoidze ◽  
M Boshta ◽  
M Gomaa ◽  
T Tchelidze ◽  
D Daraselia ◽  
...  
Keyword(s):  
P Type ◽  
Type Conduction ◽  
Mg Doped

Growth and annealing conditions of high Al-content p-type AlGaN for deep-UV LEDs

2004 ◽  
Vol 201 (12) ◽  
pp. 2803-2807 ◽  
Author(s):  
Toshiyuki Obata ◽  
Hideki Hirayama ◽  
Yoshinobu Aoyagi ◽  
Koji Ishibashi
Keyword(s):  
Al Content ◽  
Annealing Conditions ◽  
Deep Uv ◽  
P Type ◽  
High Al Content ◽  
Uv Leds

p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 65 (5) ◽  
pp. 593-594 ◽  
Author(s):  
T. Tanaka ◽  
A. Watanabe ◽  
H. Amano ◽  
Y. Kobayashi ◽  
I. Akasaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type ◽  
Type Conduction ◽  
Mg Doped

scholarly journals Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 835
Author(s):  
Chi-Chung Chen ◽  
Yu-Ren Lin ◽  
Yu-Wei Lin ◽  
Yu-Cheng Su ◽  
Chung-Chi Chen ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Layer Structure ◽  
Reference Sample ◽  
Impurity Scattering ◽  
Hole Mobility ◽  
Al Content ◽  
Ionized Impurity Scattering ◽  
Layer Structures ◽  
P Type ◽  
Mg Doped

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/un-doped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared.

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2112-L2114 ◽  
Author(s):  
Hiroshi Amano ◽  
Masahiro Kito ◽  
Kazumasa Hiramatsu ◽  
Isamu Akasaki
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
P Type ◽  
Type Conduction ◽  
Mg Doped
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