Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor

V. Dobrovolsky; F. Sizov

doi:10.1063/1.3660795

Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor

Journal of Applied Physics ◽

10.1063/1.3660795 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114513 ◽

Cited By ~ 9

Author(s):

V. Dobrovolsky ◽

F. Sizov

Keyword(s):

Thin Film ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Thin Film Silicon ◽

Effect Transistor

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Parasitic Bipolar Effect of a Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistor at High Temperatures

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cp08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CP08 ◽

Cited By ~ 1

Author(s):

Atsushi Uchida ◽

Yuka Morisawa ◽

Satoshi Matsumoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Temperatures ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon ◽

Effect Transistor

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model

Journal of Applied Physics ◽

10.1063/1.4770475 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124517 ◽

Cited By ~ 3

Author(s):

V. Dobrovolsky ◽

F. Sizov

Keyword(s):

Analytical Model ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Subthreshold Swing ◽

Effect Transistor ◽

Threshold Gate

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Failure Analysis and New Design of a Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistor Based on Emission Microscopy and 2-Dimensional Device Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1790 ◽

1995 ◽

Vol 34 (Part 1, No. 4A) ◽

pp. 1790-1795

Author(s):

Satoshi Matsumoto ◽

Takao Fukumitsu ◽

Il-Jung Kim ◽

Tatsuo Sakai ◽

Toshiaki Yachi

Keyword(s):

Thin Film ◽

Failure Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Device Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Emission Microscopy

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A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C

Technical Physics Letters ◽

10.1134/s1063785016010272 ◽

2016 ◽

Vol 42 (1) ◽

pp. 71-74

Author(s):

A. V. Leonov ◽

A. A. Malykh ◽

V. N. Mordkovich ◽

M. I. Pavlyuk

Keyword(s):

Thin Film ◽

Field Effect ◽

Field Effect Transistor ◽

Operating Temperature ◽

Temperature Range ◽

Thin Film Silicon ◽

Effect Transistor ◽

Operating Temperature Range

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Circular Pseudo-Metal Oxide Semiconductor Field Effect Transistor in Silicon-on-Insulator Analytical Model, Simulation, and Measurements

Electrochemical and Solid-State Letters ◽

10.1149/1.1390798 ◽

1999 ◽

Vol 2 (5) ◽

pp. 242 ◽

Cited By ~ 17

Author(s):

D. Munteanu

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Model Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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Effects of buried oxide stress on thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.120842 ◽

1998 ◽

Vol 72 (6) ◽

pp. 677-679 ◽

Cited By ~ 8

Author(s):

Jong-Wook Lee ◽

Myung-Hee Nam ◽

Jeong-Hee Oh ◽

Ji-Woon Yang ◽

Won-Chang Lee ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Buried Oxide ◽

Oxide Stress ◽

Effect Transistor

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Device Simulation of a Thin-Film Silicon on Insulator Power Metal-Oxide- Semiconductor Field-Effect Transistor for Structure Optimization

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.519 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 519-523 ◽

Cited By ~ 6

Author(s):

Satoshi Matsumoto ◽

Hideo Yoshino

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Device Simulation ◽

Structure Optimization ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8743 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8743-8748 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Short Channel ◽

Fully Depleted ◽

Effect Transistor ◽

Dual Material

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Temperature dependence of the thin film silicon-on-insulator field effect transistor current characteristics based on full solution for the one-dimensional MISIS structure

Materials Science and Engineering B ◽

10.1016/0921-5107(94)04039-7 ◽

1995 ◽

Vol 29 (1-3) ◽

pp. 38-42

Author(s):

S. Scheinert ◽

G. Paasch

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

One Dimensional ◽

Effect Transistor ◽

Current Characteristics ◽

Full Solution ◽

The One

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