scholarly journals Influence of defect mobility on electrostrain in acceptor-doped Ba0.80Sr0.20TiO3

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042177 ◽  
Author(s):  
K. Vani ◽  
Viswanathan Kumar
Keyword(s):  
Defect Mobility

Effect of displacement cascade structure and defect mobility on the growth of point defect clusters under irradiation

2006 ◽  
Vol 351 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
C.S. Becquart ◽  
A. Souidi ◽  
C. Domain ◽  
M. Hou ◽  
L. Malerba ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Displacement Cascade ◽  
Cascade Structure ◽  
Defect Mobility ◽  
Point Defect Clusters

Microstructure-dependent rate theory model of defect segregation and phase stability in irradiated polycrystalline LiAlO2

2021 ◽  
Author(s):  
Shenyang HU ◽  
Yulan Li ◽  
Shunli Shang ◽  
Zi-Kui Liu ◽  
Douglas Burkes ◽  
...  
Keyword(s):  
Phase Stability ◽  
Release Kinetics ◽  
Field Method ◽  
Thermomechanical Properties ◽  
Theory Model ◽  
Phase Field Method ◽  
Rate Theory ◽  
Kinetic Properties ◽  
Burnable Absorber ◽  
Defect Mobility

Abstract Gamma lithium aluminate (LiAlO2) is a breeder material for tritium and is one of key components in a tritium-producing burnable absorber rod (TPBAR). Dissolution and precipitation of second phases such as LiAl5O8 and voids are observed in irradiated LiAlO2. Such microstructure changes cause the degradation of thermomechanical properties of LiAlO2 and affect tritium retention and release kinetics, and hence, the TPBAR performance. In this work, a microstructure-dependent model of radiation-induced segregation (RIS) has been developed for investigating the accumulation of species and phase stability in polycrystalline LiAlO2 structures under irradiation. Three sublattices (i.e., [Li, Al, V]I [O, Vo]II [Lii, Ali, Oi, Vi]III), and concentrations of six diffusive species (i.e., Li; vacancy of Li or Al at [Li, Al, V]I sublattice, O vacancy at [O, Vo]II sublattice, and Li, Al and O interstitials at [Lii, Ali, Oi, Vi]III interstitial sublattices; are used to describe spatial and temporal distributions of defects and chemistry. Microstructure-dependent thermodynamic and kinetic properties including the generation, reaction, and chemical potentials of defects and defect mobility are taken into account in the model. The parametric studies demonstrated the capability of the developed RIS model to assess the effect of thermodynamic and kinetic properties of defects on the segregation and depletion of species in polycrystalline structures and to explain the phase stability observed in irradiated LiAlO2 samples. The developed RIS model will be extended to study the precipitation of LiAl5O8 and voids and tritium retention by integrating the phase-field method.

Structural manifestation of partial proton ordering and defect mobility in ice Ih

2019 ◽  
Vol 21 (16) ◽  
pp. 8264-8274 ◽  
Author(s):  
A. D. Fortes
Keyword(s):  
High Precision ◽  
Lattice Parameter ◽  
Water Ice ◽  
Partially Ordered ◽  
Defect Mobility ◽  
Proton Ordering

High precision lattice-parameter measurements provide a potential roadmap to producing partially-ordered states of water ice.

Point-defect mobility in thallous chloride doped with divalent cation and anion impurities

1984 ◽  
Vol 17 (15) ◽  
pp. 2689-2704 ◽  
Author(s):  
J Corish ◽  
B M C Parker ◽  
J M Quigley ◽  
A R Allnatt ◽  
D C A Mulcahy
Keyword(s):  
Point Defect ◽  
Divalent Cation ◽  
Defect Mobility

Theory of Doping in Studies of Defect Concentration and Transport Properties of Transition Metal Oxides and Sulphides

2015 ◽  
Vol 34 (5) ◽  
Author(s):  
Zbigniew Grzesik
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Oxidation Kinetics ◽  
Defect Formation ◽  
Defect Concentration ◽  
Defect Mobility ◽  
Enthalpy And Entropy ◽  
Kinetics Of

AbstractIn the present paper the theoretical basis and experimental verification of a method, enabling the calculation of defect concentration and their mobility in transition metal oxides and sulphides have been described. The idea of proposed method consists in determination of both these parameters in indirect way, i.e. in studying the influence of aliovalent metallic additions on the oxidation kinetics of a given metal (doping effect). It has been shown that from the results of oxidation kinetics of binary alloys, the enthalpy and entropy of defect formation and their migration can be calculated. These data, in turn, can be used for the calculation of defect concentration and defect mobility in pure, undoped oxides. Such a possibility has been illustrated on the example of nonstoichiometric nickel oxide, Ni

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