Current conduction and stability of CeO2/La2O3 stacked gate dielectric

2012 ◽  
Vol 101 (23) ◽  
pp. 233507 ◽  
Author(s):  
Hei Wong ◽  
B. L. Yang ◽  
Shurong Dong ◽  
H. Iwai ◽  
K. Kakushima ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Current Conduction

On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1133-1136 ◽  
Author(s):  
Xuan Feng ◽  
H. Wong ◽  
B.L. Yang ◽  
Shurong Dong ◽  
H. Iwai ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Conduction Mechanisms ◽  
Current Conduction

Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs

2004 ◽  
Vol 84 (13) ◽  
pp. 2325-2327 ◽  
Author(s):  
A. Chen ◽  
M. Passlack ◽  
N. Medendorp ◽  
D. Braddock
Keyword(s):  
Gate Dielectric ◽  
Current Conduction

Fundamental Characteristics of SiC MIS Structure with Al2O3 as Gate Dielectric

2011 ◽  
Vol 335-336 ◽  
pp. 1079-1085
Author(s):  
Li Liu ◽  
Xiao Hua Ma ◽  
Yin Tang Yang
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Mis Structure ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Electrical Field ◽  
Conduction Mechanisms ◽  
Current Conduction ◽  
Leakage Current Mechanism

SiC MIS structure with ultra-thin Al2O3as gate dielectric deposited by Atomic Layer Deposition(ALD) on epitaxial layer of 4H-SiC(0001)80N-/N+ substrate is fabricated. The experimental results indicate that the prepared ultra Al2O3gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25MV/cm, excellent interface properties(2×1013cm-2•eV-1) and low gate-leakage current (IG=1×10-3A/㎝-2@EOX=8MV/cm). Analysis of current conduction mechanism in deposited Al2O3gate dielectric has also been systematically performed. The confirmed conduction mechanisms consisted of FP emission, FN tunneling, DT and Schottky emission. And the dominance of these current conduction mechanisms depended on applied electrical field, When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3is 1.4eV, which can meet the requirement of SiC MISFET devices.

Structural, spectroscopic and passivation properties of a novel binuclear clamshell-type zinc(II) phthalocyanine as gate dielectric for OFET

2018 ◽  
Vol 22 (01n03) ◽  
pp. 64-76 ◽  
Author(s):  
Sebile Işık Büyükekşi ◽  
Ahmet Altındal ◽  
Nursel Açar ◽  
Abdurrahman Şengül
Keyword(s):  
Leakage Current ◽  
Density Functional ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Soret Band ◽  
Quantum Yields ◽  
Capacitance Density ◽  
Fluorescence Quantum Yields ◽  
Conduction Mechanisms ◽  
Current Conduction

A novel clamshell-type binuclear zinc(II) phthalocyanine (2) was synthesized by cross condensation of the bisphthalonitrile (1) with 4-tert-butylphthalonitrile and zinc acetate in 1:10:4 ratio. The structure of the novel compound was characterized by elemental analysis, UV-vis, FT-IR (ATR), HR MALDI-TOF mass, [Formula: see text]H NMR, [Formula: see text]C DEPT NMR and [Formula: see text]H–[Formula: see text]H COSY NMR methods. Applying electronic absorption spectroscopy and density functional theory (DFT) revealed that in THF the geometry of 2 is twisted to adopt an intermediate clamshell conformation in which the spacing between the Zn centers is about 8.1Å, providing a very good account of the observed spectrum exhibiting the characteristic B (Soret) band at 347 nm and the Q band at 673 nm. In solution, 2 was found to exist in non-aggregated form. The calculated fluorescence quantum yields ([Formula: see text] 0.23 in THF and 0.10 in DMF) were relatively reduced in comparison to that of std ZnPc. In particular, understanding of leakage current conduction mechanisms in gate dielectrics is crucial for the development of field effect transistors with improved device performance. Analysis of the reverse bias current–voltage data indicated that the origin of leakage current conduction mechanisms in clamshell-type zinc(II) phthalocyanine is Poole-Frenkel emission. The capacitance density of 12.7 nF cm[Formula: see text] at 5 Hz. and 12.1 nF cm[Formula: see text] at 13 MHz was obtained with the FTO/Pc/Au sandwich structure.

CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-421-C4-424 ◽  
Author(s):  
A. STRABONI ◽  
M. BERENGUER ◽  
B. VUILLERMOZ ◽  
P. DEBENEST ◽  
A. VERNA ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology

Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate

2002 ◽  
Vol 716 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Rajiv O. Dusane ◽  
V.Ramgopal Rao
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Substrate Surface ◽  
Scaling Limit ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Poor Performance ◽  
State Density ◽  
Direct Tunneling Current

AbstractTo extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.

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