Current-conduction and charge trapping properties due to bulk nitrogen  in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Chin-Lung Cheng; Kuei-Shu Chang-Liao; Ching-Hung Huang; Tien-Ko Wang

doi:10.1063/1.1935768

Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1935768 ◽

2005 ◽

Vol 86 (21) ◽

pp. 212902 ◽

Cited By ~ 16

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Conduction

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Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1819994 ◽

2004 ◽

Vol 85 (20) ◽

pp. 4723-4725 ◽

Cited By ~ 7

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Conduction

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Effects of HfOxNyGate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1181 ◽

2004 ◽

Vol 43 (No. 9A/B) ◽

pp. L1181-L1183 ◽

Cited By ~ 1

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Nitrogen Concentration ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Cited By ~ 1

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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The effect of aluminum gate thickness on charge trapping in metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.343797 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4821-4826 ◽

Cited By ~ 2

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

Applied Physics Express ◽

10.7567/apex.11.015701 ◽

2017 ◽

Vol 11 (1) ◽

pp. 015701 ◽

Cited By ~ 13

Author(s):

Takahiro Yamada ◽

Kenta Watanabe ◽

Mikito Nozaki ◽

Hisashi Yamada ◽

Tokio Takahashi ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Quality

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Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method

Microelectronic Engineering ◽

10.1016/j.mee.2010.11.032 ◽

2011 ◽

Vol 88 (6) ◽

pp. 872-876 ◽

Cited By ~ 8

Author(s):

Sanghun Jeon ◽

Sungho Park

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Conductance Method

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Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3562974 ◽

2011 ◽

Vol 29 (2) ◽

pp. 021209 ◽

Cited By ~ 2

Author(s):

Tackhwi Lee ◽

Kisik Choi ◽

Takashi Ando ◽

Dae-Gyu Park ◽

Michael A. Gribelyuk ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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An Oxynitride Gate Dielectric for Sub-30 Å Complementary Metal Oxide Semiconductor Devices Using Precombustion of Nitrous Oxide

Journal of The Electrochemical Society ◽

10.1149/1.1499503 ◽

2002 ◽

Vol 149 (9) ◽

pp. G532 ◽

Cited By ~ 1

Author(s):

Steven M. Shank ◽

William F. Clark ◽

Wade J. Hodge

Keyword(s):

Nitrous Oxide ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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