Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

2005 ◽  
Vol 97 (11) ◽  
pp. 113106 ◽  
Author(s):  
B. S. Ryvkin ◽  
E. A. Avrutin
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Optical Cavity ◽  
Laser Diodes ◽  
Waveguide Layer ◽  
Cavity Laser

Internal quantum efficiency of stimulated emission of (λ=1.55 µm) InGaAsP/InP laser diodes

2003 ◽  
Vol 37 (2) ◽  
pp. 233-238 ◽  
Author(s):  
G. V. Skrynnikov ◽  
G. G. Zegrya ◽  
N. A. Pikhtin ◽  
S. O. Slipchenko ◽  
V. V. Shamakhov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Stimulated Emission

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

2010 ◽  
Vol 8 (2) ◽  
pp. 464-466 ◽  
Author(s):  
Kenichiro Takeda ◽  
Kengo Nagata ◽  
Tomoki Ichikawa ◽  
Kentaro Nonaka ◽  
Yuji Ogiso ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Low Dislocation Density ◽  
Internal Loss

Improvement of Internal Quantum Efficiency in 1.55 µm Laser Diodes with InGaP Electron Stopper Layer

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1239-1242 ◽  
Author(s):  
Patrick Abraham ◽  
Joachim Piprek ◽  
Steven P. DenBaars ◽  
John E. Bowers
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes

Internal quantum efficiency of laser diodes

1992 ◽  
Vol 28 (21) ◽  
pp. 1991 ◽  
Author(s):  
P.R. Claisse ◽  
G.W. Taylor
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes

A Novel Method to Measure the Internal Quantum Efficiency and Optical Loss of Laser Diodes

2015 ◽  
Vol 27 (11) ◽  
pp. 1169-1172 ◽  
Author(s):  
Y. Wang ◽  
Q. Gong ◽  
C. F. Cao ◽  
R. H. Cheng ◽  
J. Y. Yan ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Optical Loss ◽  
Novel Method

Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3µm Wavelength Range

1999 ◽  
Vol 607 ◽  
Author(s):  
C. Mermelstein ◽  
S. Simanowski ◽  
M. Mayer ◽  
R. Kiefer ◽  
J. Schmitz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Optical Cavity ◽  
Light Output ◽  
Threshold Current ◽  
Type I ◽  
Material System ◽  
Cw Operation ◽  
Cavity Laser

AbstractWe report on room temperature cw operation of type-I semiconductor quantum well (QW) laser diodes based on the GaInAsSb/AIGaAsSb/GaSb material system emitting beyond 2.2 µm. Lasing is observed in cw mode up to at least 320 K. A high internal quantum efficiency of 65% and a low internal loss coefficient of 5 cm1have been achieved for a single QW (SQW)large optical cavity laser at 280 K. An extrapolated threshold current density for infinite cavity length of 144 A/cm2and 55 A/cm2has been deduced for the 3 QW and SQW lasers, respectively, which scales with the number of QWs. A maximum cw light output power of 230 mW at 280 K heatsink temperature was obtained for a 3 QW large optical cavity laser with HR/AR coated mirror facets, mounted substrate-side down.

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