High-voltage electric-field-induced growth of aligned “cow-nipple-like” submicro-nano carbon isomeric structure via chemical vapor deposition

2012 ◽  
Vol 112 (11) ◽  
pp. 114310 ◽  
Author(s):  
Chengwei Liao ◽  
Yupeng Zhang ◽  
Chunxu Pan
Keyword(s):  
Chemical Vapor Deposition ◽  
Electric Field ◽  
High Voltage ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Isomeric Structure ◽  
Nano Carbon

On the Formation of Thick and Multiple Layer Simox Structures and their Applications

1989 ◽  
Vol 147 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R. A. Soref ◽  
P. Sioshansi
Keyword(s):  
Chemical Vapor Deposition ◽  
Electric Field ◽  
High Voltage ◽  
Vapor Deposition ◽  
Optical Interconnects ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer System ◽  
Silicon Waveguides ◽  
Buried Layer

AbstractThis paper will address the formation of SIMOX structures with thick and multiple buried SiO2 layers by multiple oxygen implantation and growth of epitaxial Si by chemical vapor deposition (CVD). Our results indicate that SIMOX material can be produced with a buried layer of any thickness or with any number of distinct buried oxide layers and distinct silicon layers. Thick and double buried SiO2 layer material may be useful for high voltage isolation and electric field shielding.In addition, we have demonstrated optical waveguide action in SIMOX wafers. This suggests that in a double buried SiO2 layer system, three dimensional stacked integration of silicon waveguides is possible, including two level optical interconnects.

High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes

2001 ◽  
Vol 40 (Part 2, No. 4A) ◽  
pp. L319-L322 ◽  
Author(s):  
Satoshi Tamura ◽  
Keiko Fujihira ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
High Voltage ◽  
Vapor Deposition ◽  
High Purity ◽  
Chemical Vapor ◽  
Cold Wall ◽  
Pin Diodes
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