scholarly journals Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

2012 ◽  
Vol 101 (17) ◽  
pp. 171105 ◽  
Author(s):  
H. J. Haugan ◽  
G. J. Brown ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
K. Mahalingam ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Infrared Detection ◽  
Strained Layer ◽  
Long Wavelength ◽  
Strained Layer Superlattices ◽  
Long Wavelength Infrared

Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detection

1995 ◽  
Vol 17 (4) ◽  
pp. 373 ◽  
Author(s):  
Frank Szmulowicz ◽  
Eric R. Heller ◽  
Kent Fisher ◽  
Frank L. Madarasz
Keyword(s):  
Infrared Detection ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Cut-off wavelength manipulation of pixel-level plasmonic microcavity for long wavelength infrared detection

2019 ◽  
Vol 114 (6) ◽  
pp. 061104 ◽  
Author(s):  
Yuwei Zhou ◽  
Zhifeng Li ◽  
Xiaohao Zhou ◽  
Jing Zhou ◽  
Yuanliao Zheng ◽  
...  
Keyword(s):  
Infrared Detection ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

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