Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection

2002 ◽  
Author(s):  
Dao Hua Zhang ◽  
Lu Sun ◽  
Soon Fatt Yoon ◽  
Chan Hin Kam ◽  
Weijun Fan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Infrared Detection ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
Clayton L. Workman ◽  
Zhiming Wang ◽  
Wenquan Ma ◽  
Christi E. George ◽  
R. Panneer Selvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Detector ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Material System ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Long Wavelength Infrared

ABSTRACTWe report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

The growth and characterization of Si1−xGex multiple quantum wells on Si(110) and Si(111)

1996 ◽  
pp. 21-26
Author(s):  
P.E. Thompson ◽  
T.L. Kreifels ◽  
M. Gregg ◽  
R.L. Hengehold ◽  
Y.K. Yeo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

2018 ◽  
Vol 934 ◽  
pp. 8-12
Author(s):  
Jian Guo Zhao ◽  
Xiong Zhang ◽  
Jia Qi He ◽  
Shuai Chen ◽  
Zi Li Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Modulation Method ◽  
Duty Ratio ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Metal Organic

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN

2008 ◽  
Vol 92 (11) ◽  
pp. 111106 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. S. Paek ◽  
H. Kim ◽  
Y. M. Park ◽  
T. Jang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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