Scanning internal photoemission microscopy for the identification of hot carrier transport mechanisms

2012 ◽  
Vol 101 (11) ◽  
pp. 111608 ◽  
Author(s):  
D. Differt ◽  
W. Pfeiffer ◽  
D. Diesing
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms ◽  
Internal Photoemission ◽  
Hot Carrier

Unveiling hot carrier relaxation and carrier transport mechanisms in quasi-two-dimensional layered perovskites

2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Carrier Relaxation ◽  
Hot Carrier ◽  
Layered Perovskites ◽  
2D To 3D

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

1987 ◽  
Vol 97-98 ◽  
pp. 939-942 ◽  
Author(s):  
J.P. Conde ◽  
S. Aljishi ◽  
D.S. Shen ◽  
M. Angell ◽  
S. Wagner
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms

Coupled-Langevin-equation analysis of hot-carrier transport in semiconductors

1992 ◽  
Vol 45 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Tilmann Kuhn ◽  
Lino Reggiani ◽  
Luca Varani
Keyword(s):  
Langevin Equation ◽  
Carrier Transport ◽  
Hot Carrier ◽  
Equation Analysis

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Transient Hot-Carrier Transport

1991 ◽  
pp. 173-241
Author(s):  
David K. Ferry ◽  
Robert O. Grondin
Keyword(s):  
Carrier Transport ◽  
Hot Carrier

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier

scholarly journals Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 381-386 ◽  
Author(s):  
M. Trovato ◽  
L. Reggiani
Keyword(s):  
Maximum Entropy ◽  
Carrier Transport ◽  
Maximum Entropy Principle ◽  
Average Energy ◽  
Band Model ◽  
Hot Carrier ◽  
Hydrodynamic Calculations ◽  
Entropy Principle ◽  
The Moment ◽  
Total Average

By extending the maximum entropy principle within a scheme in total average energy we obtain a closed system of hydrodynamic equations for a full nonparabolic band model in which all the unknown constitutive functions are completely determined. The theory is validated by comparing hydrodynamic calculations with Monte Carlo simulations performed for bulk and submicron Si structures at 300 K. In the general framework of the moment theory a systematic study of small-signal response functions is provided.

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