Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

2012 ◽  
Vol 101 (6) ◽  
pp. 063501 ◽  
Author(s):  
Wei Hu ◽  
Xinman Chen ◽  
Guangheng Wu ◽  
Yanting Lin ◽  
Ni Qin ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Unipolar Resistive Switching

scholarly journals Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

2020 ◽  
Vol 3 (12) ◽  
pp. 11889-11896
Author(s):  
Xianxi Yu ◽  
Tangyao Shen ◽  
Chunqin Zhu ◽  
Qi Zeng ◽  
Anran Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Unipolar Resistive Switching

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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