Study of barrier inhomogeneities in I–V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal–oxide–semiconductor diode

2012 ◽  
Vol 112 (2) ◽  
pp. 024521 ◽  
Author(s):  
Mamta Sharma ◽  
S. K. Tripathi
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Barrier Inhomogeneities

C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer

1981 ◽  
Vol 39 (1) ◽  
pp. 89-90 ◽  
Author(s):  
Akira Suzuki ◽  
Kazunobu Mameno ◽  
Nobuyuki Furui ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Thermally Grown

Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals

2010 ◽  
Vol 97 (18) ◽  
pp. 182103 ◽  
Author(s):  
Sejoon Lee ◽  
Youngmin Lee ◽  
Yoon Shon ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Metal Oxide ◽  
Transport Properties ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Tunneling Transport

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

2004 ◽  
Vol 84 (7) ◽  
pp. 1123-1125 ◽  
Author(s):  
B. S. Kang ◽  
F. Ren ◽  
B. P. Gila ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Metal Oxide Semiconductor ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Semiconductor Diode
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