AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

2004 ◽  
Vol 84 (7) ◽  
pp. 1123-1125 ◽  
Author(s):  
B. S. Kang ◽  
F. Ren ◽  
B. P. Gila ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Metal Oxide Semiconductor ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Semiconductor Diode

scholarly journals Field Study of Metal Oxide Semiconductor Gas Sensors in Temperature Cycled Operation for Selective VOC Monitoring in Indoor Air

Atmosphere ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 647
Author(s):  
Tobias Baur ◽  
Johannes Amann ◽  
Caroline Schultealbert ◽  
Andreas Schütze
Keyword(s):  
Air Quality ◽  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Indoor Air ◽  
Ambient Air ◽  
Quantitative Agreement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temporal Resolution

More and more metal oxide semiconductor (MOS) gas sensors with digital interfaces are entering the market for indoor air quality (IAQ) monitoring. These sensors are intended to measure volatile organic compounds (VOCs) in indoor air, an important air quality factor. However, their standard operating mode often does not make full use of their true capabilities. More sophisticated operation modes, extensive calibration and advanced data evaluation can significantly improve VOC measurements and, furthermore, achieve selective measurements of single gases or at least types of VOCs. This study provides an overview of the potential and limits of MOS gas sensors for IAQ monitoring using temperature cycled operation (TCO), calibration with randomized exposure and data-based models trained with advanced machine learning. After lab calibration, a commercial digital gas sensor with four different gas-sensitive layers was tested in the field over several weeks. In addition to monitoring normal ambient air, release tests were performed with compounds that were included in the lab calibration, but also with additional VOCs. The tests were accompanied by different analytical systems (GC-MS with Tenax sampling, mobile GC-PID and GC-RCP). The results show quantitative agreement between analytical systems and the MOS gas sensor system. The study shows that MOS sensors are highly suitable for determining the overall VOC concentrations with high temporal resolution and, with some restrictions, also for selective measurements of individual components.

C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer

1981 ◽  
Vol 39 (1) ◽  
pp. 89-90 ◽  
Author(s):  
Akira Suzuki ◽  
Kazunobu Mameno ◽  
Nobuyuki Furui ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Thermally Grown

Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals

2010 ◽  
Vol 97 (18) ◽  
pp. 182103 ◽  
Author(s):  
Sejoon Lee ◽  
Youngmin Lee ◽  
Yoon Shon ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Metal Oxide ◽  
Transport Properties ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Tunneling Transport

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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