C‐Vcharacteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2layer

1981 ◽  
Vol 39 (1) ◽  
pp. 89-90 ◽  
Author(s):  
Akira Suzuki ◽  
Kazunobu Mameno ◽  
Nobuyuki Furui ◽  
Hiroyuki Matsunami
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Thermally Grown

Metal-oxide–semiconductor characteristics of thermally grown nitrided SiO2 thin film on 4H-SiC in various N2O ambient

2010 ◽  
Vol 518 (12) ◽  
pp. 3255-3259 ◽  
Author(s):  
Kuan Yew Cheong ◽  
JeongHyun Moon ◽  
Hyeong Joon Kim ◽  
Wook Bahng ◽  
Nam-Kyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sio2 Thin Film ◽  
Thermally Grown

Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals

2010 ◽  
Vol 97 (18) ◽  
pp. 182103 ◽  
Author(s):  
Sejoon Lee ◽  
Youngmin Lee ◽  
Yoon Shon ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Metal Oxide ◽  
Transport Properties ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Tunneling Transport

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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