Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

2012 ◽  
Vol 112 (2) ◽  
pp. 024906 ◽  
Author(s):  
J. Gaspar ◽  
A. Gualdino ◽  
B. Lemke ◽  
O. Paul ◽  
V. Chu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Thin Silicon ◽  
Substrate Temperatures

Investigation of the tantalum catalyst during the hot wire chemical vapor deposition of thin silicon films

2006 ◽  
Vol 501 (1-2) ◽  
pp. 322-325 ◽  
Author(s):  
D. Grunsky ◽  
M. Kupich ◽  
B. Hofferberth ◽  
B. Schroeder
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Thin Silicon

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
Charles W. Teplin ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Hot Wire ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractWe have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm-3). The hydrogen concentration is found to increase substantially with film thickness from 5·1018 to 5·1019 cm-3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Deposition of amorphous silicon films by hot-wire chemical vapor deposition

1999 ◽  
Vol 85 (9) ◽  
pp. 6843-6852 ◽  
Author(s):  
K. F. Feenstra ◽  
R. E. I. Schropp ◽  
W. F. Van der Weg
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire

Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies

2002 ◽  
Vol 61-62 ◽  
pp. 625-629 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Alka Kumbhar ◽  
R.O. Dusane ◽  
V.Ramgopal Rao
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Thin Silicon
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