Improved sensing performance of polycrystalline-silicon based dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing membrane

Hyun-June Jang; Tae-Eon Bae; Won-Ju Cho

doi:10.1063/1.4729762

Improved sensing performance of polycrystalline-silicon based dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing membrane

Applied Physics Letters ◽

10.1063/1.4729762 ◽

2012 ◽

Vol 100 (25) ◽

pp. 253703 ◽

Cited By ~ 15

Author(s):

Hyun-June Jang ◽

Tae-Eon Bae ◽

Won-Ju Cho

Keyword(s):

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

High K ◽

Dual Gate ◽

Silicon Based ◽

Sensing Membrane ◽

Sensing Performance

Download Full-text

(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

ECS Meeting Abstracts ◽

10.1149/ma2018-02/36/1199 ◽

2018 ◽

Keyword(s):

Silicon Nanowires ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Dual Gate

Download Full-text

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.1592634 ◽

2003 ◽

Vol 83 (2) ◽

pp. 308-310 ◽

Cited By ~ 27

Author(s):

C. W. Yang ◽

Y. K. Fang ◽

C. H. Chen ◽

S. F. Chen ◽

C. Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage ◽

P Type

Download Full-text

(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

ECS Transactions ◽

10.1149/08611.0079ecst ◽

2018 ◽

Vol 86 (11) ◽

pp. 79-88

Author(s):

Anne-Claire Salaun ◽

Brice Le Borgne ◽

Laurent Pichon

Keyword(s):

Silicon Nanowires ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Dual Gate

Download Full-text

Increasing the noise margin in organic circuits using dual gate field-effect transistors

Applied Physics Letters ◽

10.1063/1.2904624 ◽

2008 ◽

Vol 92 (14) ◽

pp. 143304 ◽

Cited By ~ 50

Author(s):

M. Spijkman ◽

E. C. P. Smits ◽

P. W. M. Blom ◽

D. M. de Leeuw ◽

Y. Bon Saint Côme ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Margin ◽

Dual Gate

Download Full-text

New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

Download Full-text

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

AIP Advances ◽

10.1063/5.0055574 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065229

Author(s):

Yanxiao Sun ◽

Gang Niu ◽

Wei Ren ◽

Jinyan Zhao ◽

Yankun Wang ◽

...

Keyword(s):

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

High K ◽

High K Dielectric

Download Full-text

Design Optimization of Silicon-based Junctionless Fin-type Field-Effect Transistors for Low Standby Power Technology

Journal of Electrical Engineering and Technology ◽

10.5370/jeet.2013.8.6.1497 ◽

2013 ◽

Vol 8 (6) ◽

pp. 1497-1502 ◽

Cited By ~ 1

Author(s):

Jae Hwa Seo ◽

Heng Yuan ◽

In Man Kang

Keyword(s):

Design Optimization ◽

Field Effect ◽

Field Effect Transistors ◽

Standby Power ◽

Silicon Based

Download Full-text

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Download Full-text

Phosphorene field-effect transistors using high-k gate dielectrics of epitaxial SrTiO 3 layers grown on Nb-doped SrTiO 3 substrates

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2017.09.003 ◽

2017 ◽

Vol 71 ◽

pp. 409-412

Author(s):

Hyun Wook Shin ◽

Jong Yeog Son

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High K

Download Full-text

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

Download Full-text