A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

2012 ◽  
Vol 111 (11) ◽  
pp. 113105 ◽  
Author(s):  
P. Kamyczek ◽  
E. Placzek-Popko ◽  
Vl. Kolkovsky ◽  
S. Grzanka ◽  
R. Czernecki
Keyword(s):  
Yellow Luminescence ◽  
Deep Acceptor ◽  
Acceptor Defect

Blue and Yellow Luminescence in ZnO Films Grown by Peroxide MBE

2007 ◽  
Vol 1035 ◽  
Author(s):  
Vitaliy Avrutin ◽  
Mikhail A. Reshchikov ◽  
Natalia Izyumskaya ◽  
Ryoko Shimada ◽  
Hadis Morkoç
Keyword(s):  
Point Defects ◽  
Random Distribution ◽  
Excitation Intensity ◽  
Zno Films ◽  
Yellow Luminescence ◽  
Yellow Band ◽  
Blue Band ◽  
Deep Acceptor ◽  
Potential Fluctuations ◽  
Charged Point

AbstractWe observed strong shifts of the blue and yellow luminescence bands with variation of excitation intensity in ZnO films grown on sapphire by MBE using hydrogen peroxide as a source of reactive oxygen. The blue band, having a maximum in the range from 2.85 to 3.15 eV in different samples and different excitation intensities at 10 K, is attributed to diagonal transitions from the conduction band (or shallow donors) to the valence band in realm of potential fluctuations caused by random distribution of charged point defects in a compensated semiconductor. The yellow band is related to an unidentified deep acceptor.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Yellow luminescence of co-doped gadolinium oxyhydroxide

2015 ◽  
Vol 33 (7) ◽  
pp. 712-716 ◽  
Author(s):  
Hiroaki Samata ◽  
Shungo Imanaka ◽  
Masashi Hanioka ◽  
Tadashi C. Ozawa
Keyword(s):  
Yellow Luminescence ◽  
Co Doped

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?

2007 ◽  
Vol 102 (11) ◽  
pp. 113521 ◽  
Author(s):  
D. G. Zhao ◽  
D. S. Jiang ◽  
J. J. Zhu ◽  
Z. S. Liu ◽  
S. M. Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Yellow Luminescence

scholarly journals Optical and Structural Properties of a Eu(II)-Doped Silico-aluminate with Channel Structure and Partial Site Occupation

2007 ◽  
Vol 62 (12) ◽  
pp. 1535-1542 ◽  
Author(s):  
Andreas Rief ◽  
Frank Kubel ◽  
Hans Hagemann
Keyword(s):  
Channel Structure ◽  
Yellow Luminescence ◽  
Large Shift ◽  
3 Dimensional ◽  
Site Occupation ◽  
Orange Yellow ◽  
Linear Behavior ◽  
Bright Orange ◽  
Wyckoff Position ◽  
The Eu

A new barium silico-aluminate phase with the stoichiometry Ba13.35(1) Al30.7Si5.3O70 has been found and characterized. The compound crystallizes in the space group P63/m (No. 176) with a = 15.1683(17), c = 8.8708(6) Å, V = 1767.5(4) Å3, Z = 1, Rw = 0.026, 32 refined parameters. A 3-dimensional matrix of Al/SiO4 tetrahedra with Ba(II) ions located in channels along the c axis builds up the structure. One of these channels is partially filled with Ba(II) ions (CN 6+3) in Wyckoff position 2a, leaving ~ 1/3 of the positions empty. The second and third type of Ba(II) ions occupy channels orientated along the c axis with CN 4+2+2 and 4+3+1, respectively. The structure shows a rare clustered arrangement of six tetrahedra filled exclusively by Al(III) and therefore is an exception to Loewenstein’s rule. The other tetrahedral positions show an Al to Si ratio of ~ 4 : 1. The Al/Si-O bond lengths in the tetrahedral Al/Si positions drawn vs. site occupation show linear behavior similar to the prediction by Vegard’s rule for solid solutions. After doping with Eu(II) the compound shows bright orange-yellow luminescence with an unusual large shift of the Eu(II) emission band.

scholarly journals Modification of the yellow luminescence in gamma-ray irradiated GaN bulk single crystal

2017 ◽  
Vol 864 ◽  
pp. 012016 ◽  
Author(s):  
Y. Torita ◽  
N. Nishikata ◽  
K. Kuriyama ◽  
K. Kushida ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gamma Ray ◽  
Bulk Single Crystal ◽  
Yellow Luminescence

Carbon impurities and the yellow luminescence in GaN

2010 ◽  
Vol 97 (15) ◽  
pp. 152108 ◽  
Author(s):  
J. L. Lyons ◽  
A. Janotti ◽  
C. G. Van de Walle
Keyword(s):  
Yellow Luminescence ◽  
Carbon Impurities
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