Carbon impurities and the yellow luminescence in GaN

2010 ◽  
Vol 97 (15) ◽  
pp. 152108 ◽  
Author(s):  
J. L. Lyons ◽  
A. Janotti ◽  
C. G. Van de Walle
Keyword(s):  
Yellow Luminescence ◽  
Carbon Impurities

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

scholarly journals The influence of active carbon contaminants on the ozonation mechanism interpretation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Lilla Fijołek ◽  
Joanna Świetlik ◽  
Marcin Frankowski
Keyword(s):  
Activated Carbon ◽  
Active Carbon ◽  
Alkali Metals ◽  
Activated Carbons ◽  
Carbon Surface ◽  
Bulk Solution ◽  
Ozone Decomposition ◽  
Reaction Products ◽  
Treatment Technology ◽  
Carbon Impurities

AbstractIn water treatment technology, activated carbons are used primarily as sorbents to remove organic impurities, mainly natural organic matter, but also as catalysts in the ozonation process. Commercially available activated carbons are usually contaminated with mineral substances, classified into two main groups: alkali metals (Ca, Na, K, Li, Mg) and multivalent metals (Al, Fe, Ti, Si). The presence of impurities on the carbon surface significantly affects the pHpzc values determined for raw and ozonated carbon as well as their acidity and alkalinity. The scale of the observed changes strongly depends on the pH of the ozonated system, which is related to the diffusion of impurities from the carbon to the solution. In an acidic environment (pH 2.5 in this work), the ozone molecule is relatively stable, yet active carbon causes its decomposition. This is the first report that indirectly indicates that contaminants on the surface of activated carbon (multivalent elements) contribute to the breakdown of ozone towards radicals, while the process of ozone decomposition by purified carbons does not follow the radical path in bulk solution. Carbon impurities also change the distribution of the reaction products formed by organic pollutants ozonation, which additionally confirms the radical process. The study showed that the use of unpurified activated carbon in the ozonation of succinic acid (SA) leads to the formation of a relatively large amount of oxalic acid (OA), which is a product of radical SA degradation. On the other hand, in solutions with purified carbon, the amount of OA generated is negligible.

scholarly journals Quantification of Carbonic Contamination of Fused Silica Surfaces at Different Stages of Classical Optics Manufacturing

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1620
Author(s):  
Robert Köhler ◽  
Domenico Hellrung ◽  
Daniel Tasche ◽  
Christoph Gerhard
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Decisive Role ◽  
Fused Silica ◽  
Process Step ◽  
Carbon Contamination ◽  
Silica Surfaces ◽  
Carbon Impurities ◽  
High Level ◽  
Glass Surfaces

The chemical composition of ground and polished fused silica glass surfaces plays a decisive role in different applications of optics. In particular, a high level of carbon impurities is often undesirable for further processing and especially for gluing or cementing where adhesion failure may be attributed to carbonic surface-adherent contaminants. In this study, the surface carbon content at different stages of classical optics manufacturing was thus investigated. Two different standard processes—grinding and lapping with two final polishing processes using both polyurethane and pitch pads—were considered. After each process step, the chemical composition and roughness of the surface were analysed using X-ray photoelectron spectroscopy and atomic force microscopy. An obvious correlation between surface roughness and effective surface area, respectively, and the proportion of carbon contamination was observed. The lowest carbon contamination was found in case of lapped and pitch polished surfaces.

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Yellow luminescence of co-doped gadolinium oxyhydroxide

2015 ◽  
Vol 33 (7) ◽  
pp. 712-716 ◽  
Author(s):  
Hiroaki Samata ◽  
Shungo Imanaka ◽  
Masashi Hanioka ◽  
Tadashi C. Ozawa
Keyword(s):  
Yellow Luminescence ◽  
Co Doped

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?

2007 ◽  
Vol 102 (11) ◽  
pp. 113521 ◽  
Author(s):  
D. G. Zhao ◽  
D. S. Jiang ◽  
J. J. Zhu ◽  
Z. S. Liu ◽  
S. M. Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Yellow Luminescence

scholarly journals Optical and Structural Properties of a Eu(II)-Doped Silico-aluminate with Channel Structure and Partial Site Occupation

2007 ◽  
Vol 62 (12) ◽  
pp. 1535-1542 ◽  
Author(s):  
Andreas Rief ◽  
Frank Kubel ◽  
Hans Hagemann
Keyword(s):  
Channel Structure ◽  
Yellow Luminescence ◽  
Large Shift ◽  
3 Dimensional ◽  
Site Occupation ◽  
Orange Yellow ◽  
Linear Behavior ◽  
Bright Orange ◽  
Wyckoff Position ◽  
The Eu

A new barium silico-aluminate phase with the stoichiometry Ba13.35(1) Al30.7Si5.3O70 has been found and characterized. The compound crystallizes in the space group P63/m (No. 176) with a = 15.1683(17), c = 8.8708(6) Å, V = 1767.5(4) Å3, Z = 1, Rw = 0.026, 32 refined parameters. A 3-dimensional matrix of Al/SiO4 tetrahedra with Ba(II) ions located in channels along the c axis builds up the structure. One of these channels is partially filled with Ba(II) ions (CN 6+3) in Wyckoff position 2a, leaving ~ 1/3 of the positions empty. The second and third type of Ba(II) ions occupy channels orientated along the c axis with CN 4+2+2 and 4+3+1, respectively. The structure shows a rare clustered arrangement of six tetrahedra filled exclusively by Al(III) and therefore is an exception to Loewenstein’s rule. The other tetrahedral positions show an Al to Si ratio of ~ 4 : 1. The Al/Si-O bond lengths in the tetrahedral Al/Si positions drawn vs. site occupation show linear behavior similar to the prediction by Vegard’s rule for solid solutions. After doping with Eu(II) the compound shows bright orange-yellow luminescence with an unusual large shift of the Eu(II) emission band.

Sign in / Sign up

Export Citation Format

Share Document