A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation

2012 ◽  
Vol 100 (22) ◽  
pp. 222903 ◽  
Author(s):  
B. Yao ◽  
Z. B. Fang ◽  
Y. Y. Zhu ◽  
T. Ji ◽  
G. He
Keyword(s):  
Metal Oxide ◽  
Frequency Dispersion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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