High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

2012 ◽  
Vol 100 (21) ◽  
pp. 213108 ◽  
Author(s):  
Akira Wada ◽  
Rui Zhang ◽  
Shinichi Takagi ◽  
Seiji Samukawa
Keyword(s):  
Thin Films ◽  
Oxidation Process ◽  
Interface State ◽  
Germanium Dioxide ◽  
State Density ◽  
Interface State Density ◽  
Neutral Beam ◽  
High Quality

Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces

2000 ◽  
Vol 640 ◽  
Author(s):  
Hiroyuki Matsunami ◽  
Tsunenobu Kimoto ◽  
Hiroshi Yano
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Electron Trapping ◽  
Conduction Band Edge ◽  
Coulomb Scattering ◽  
High Quality ◽  
Channel Mobility

ABSTRACTHigh-quality 4H-SiC has been epitaxially grown on (1120) substrates by chemical vapor deposition. The physical properties of epilayers and MOS interfaces on both (1120) and off-axis (0001) substrates are elucidated. An unintentionally doped 4H-SiC epilayer on (1120) shows a donor concentration of 1×1014 cm−3 with a total trap concentration as low as 3.8×1012 cm−3. Inversion-type planar MOSFETs fabricated on 4H-SiC (1120) exhibit a high channel mobility of 96 cm2/Vs. The channel mobility decreases according to the T−2.2 dependence above 200K, indicating reduced Coulomb scattering and/or electron trapping. The superior MOS interface on (1120) originates from the much lower interface state density near the conduction band edge.

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