Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process

2013 ◽  
Vol 50 (9) ◽  
pp. 1085-1090 ◽  
Author(s):  
A. Wada ◽  
R. Zhang ◽  
S. Takagi ◽  
S. Samukawa
Keyword(s):  
Oxidation Process ◽  
Germanium Dioxide ◽  
Neutral Beam ◽  
High Quality ◽  
Dioxide Film

Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300°C Using Tetraethyl Orthosilicate

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2341-L2344 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Dioxide ◽  
Tetraethyl Orthosilicate ◽  
Plasma Cvd ◽  
High Quality ◽  
Silicon Dioxide Film ◽  
Dioxide Film

A low-temperature and high-quality radical-assisted oxidation process utilizing a remote ultraviolet ozone source for high-performance SiGe/Si MOSFETs

2004 ◽  
Vol 19 (7) ◽  
pp. 792-797 ◽  
Author(s):  
Young-Joo Song ◽  
Bongki Mheen ◽  
Jin-Young Kang ◽  
Young-Shik Lee ◽  
Nae-Eung Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Oxidation Process ◽  
High Quality
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