scholarly journals Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

AIP Advances ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 022118 ◽  
Author(s):  
J. Zhang ◽  
X. F. Li ◽  
J. G. Lu ◽  
P. Wu ◽  
J. Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Low Temperature Annealing

Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

2015 ◽  
Vol 1731 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Francisco Flores ◽  
Adan Luna ◽  
Salvador Alcantara ◽  
Javier Martinez ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Annealing Time ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Electrical Performance ◽  
Zno Films ◽  
Low Temperature Annealing ◽  
Ultrasonic Spray ◽  
Annealing Effects

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

2011 ◽  
Vol 19 (9) ◽  
pp. 620 ◽  
Author(s):  
Woong Hee Jeong ◽  
Jung Hyeon Bae ◽  
Kyung Min Kim ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Low Temperature Annealing

Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

2011 ◽  
Vol 32 (12) ◽  
pp. 1692-1694 ◽  
Author(s):  
Shinhyuk Yang ◽  
Jun Yong Bak ◽  
Sung-Min Yoon ◽  
Min Ki Ryu ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance

P-7: Improving Electrical Performance of the Scaled Low-Temperature Poly-Si Thin Film Transistors Using Vacuum Encapsulation Technique

2008 ◽  
Vol 39 (1) ◽  
pp. 1192
Author(s):  
Wei-Kai Lin ◽  
Ta-Chuan Liao ◽  
Chun-Yu Wu ◽  
Shih-Wei Tu ◽  
Yen-Ting Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Si Thin Film

scholarly journals Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1761 ◽  
Author(s):  
Liaojun Wan ◽  
Fuchao He ◽  
Yu Qin ◽  
Zhenhua Lin ◽  
Jie Su ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Electrical Performance ◽  
Zno Films ◽  
Zno Thin Film ◽  
Chlorobenzoic Acid ◽  
Interfacial Modification ◽  
Temperature Solution

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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