scholarly journals Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ye Kyun Kim ◽  
Cheol Hyoun Ahn ◽  
Myeong Gu Yun ◽  
Sung Woon Cho ◽  
Won Jun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Amorphous Ingazno

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors

2018 ◽  
Vol 57 (9) ◽  
pp. 090306 ◽  
Author(s):  
Naofumi Yoshida ◽  
Juan Paolo Bermundo ◽  
Yasuaki Ishikawa ◽  
Toshiaki Nonaka ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

2015 ◽  
Vol 1731 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Francisco Flores ◽  
Adan Luna ◽  
Salvador Alcantara ◽  
Javier Martinez ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Annealing Time ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Electrical Performance ◽  
Zno Films ◽  
Low Temperature Annealing ◽  
Ultrasonic Spray ◽  
Annealing Effects

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

A Study on the Mechanical Stability of a-IGZO Based Inverter

2012 ◽  
Author(s):  
Byung-Jae Kim ◽  
Youn-Jea Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Mechanical Characteristics ◽  
Mechanical Stability ◽  
Electrical Performance ◽  
Oxide Semiconductors ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductors ◽  
Amorphous Ingazno

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).

Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

2011 ◽  
Vol 32 (12) ◽  
pp. 1692-1694 ◽  
Author(s):  
Shinhyuk Yang ◽  
Jun Yong Bak ◽  
Sung-Min Yoon ◽  
Min Ki Ryu ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Electrical Performance

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

2012 ◽  
Vol 47 (10) ◽  
pp. 2923-2926 ◽  
Author(s):  
Ji-Hong Kim ◽  
Jae-Won Kim ◽  
Ji-Hyung Roh ◽  
Kyung-Ju Lee ◽  
Kang-Min Do ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Amorphous Ingazno
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