Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

2012 ◽  
Vol 100 (15) ◽  
pp. 152116 ◽  
Author(s):  
S. Pandey ◽  
D. Cavalcoli ◽  
B. Fraboni ◽  
A. Cavallini ◽  
T. Brazzini ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Trap States ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Surface Trap ◽  
Gas Density ◽  
Dimensional Electron Gas

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

2008 ◽  
Vol 103 (9) ◽  
pp. 093714 ◽  
Author(s):  
M. Gonschorek ◽  
J.-F. Carlin ◽  
E. Feltin ◽  
M. A. Py ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Dimensional Electron Gas

scholarly journals Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

2018 ◽  
Vol 8 (2) ◽  
pp. 954 ◽  
Author(s):  
Asmae Babaya ◽  
Bri Seddik ◽  
Saadi Adil
Keyword(s):  
Electron Gas ◽  
Voltage Characteristic ◽  
Two Dimensional ◽  
Algan Layer ◽  
Dimensional Electron ◽  
Current Voltage Characteristic ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Current Voltage ◽  
Dimensional Electron Gas

This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.

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