Surface migration as a determinate factor of the sticking coefficient derived from the chemisorption model

1995 ◽  
Vol 103 (21) ◽  
pp. 9418-9425 ◽  
Author(s):  
M. Izawa ◽  
T. Kumihashi
Keyword(s):  
Sticking Coefficient ◽  
Surface Migration ◽  
Chemisorption Model

scholarly journals Ripple Formation during Oblique Angle Etching

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 272
Author(s):  
Mehmet F. Cansizoglu ◽  
Mesut Yurukcu ◽  
Tansel Karabacak
Keyword(s):  
Plasma Etching ◽  
Incidence Angle ◽  
Incident Beam ◽  
Root Mean Square Roughness ◽  
Sticking Coefficient ◽  
Oblique Angle ◽  
Nano Fabrication ◽  
Ripple Formation ◽  
Rapid Formation ◽  
Roughness Analysis

Chemical removal of materials from the surface is a fundamental step in micro- and nano-fabrication processes. In conventional plasma etching, etchant molecules are non-directional and perform a uniform etching over the surface. However, using a highly directional obliquely incident beam of etching agent, it can be possible to engineer surfaces in the micro- or nano- scales. Surfaces can be patterned with periodic morphologies like ripples and mounds by controlling parameters including the incidence angle with the surface and sticking coefficient of etching particles. In this study, the dynamic evolution of a rippled morphology has been investigated during oblique angle etching (OAE) using Monte Carlo simulations. Fourier space and roughness analysis were performed on the resulting simulated surfaces. The ripple formation was observed to originate from re-emission and shadowing effects during OAE. Our results show that the ripple wavelength and root-mean-square roughness evolved at a more stable rate with accompanying quasi-periodic ripple formation at higher etching angles (θ > 60°) and at sticking coefficient values (Sc) 0.5 ≤ Sc ≤ 1. On the other hand, smaller etching angle (θ < 60°) and lower sticking coefficient values lead to a rapid formation of wider and deeper ripples. This result of this study can be helpful to develop new surface patterning techniques by etching.

Kinetic Monte Carlo Simulation of Diamond Film Growth with the Inclusion of Surface Migration

1998 ◽  
Vol 527 ◽  
Author(s):  
Armando Netto ◽  
Michael Frenklach
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Diamond Films ◽  
State Theory ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Gaseous Species ◽  
Surface Migration

ABSTRACTDiamond films are of interest in many practical applications but the technology of producing high-quality, low-cost diamond is still lacking. To reach this goal, it is necessary to understand the mechanism underlying diamond deposition. Most reaction models advanced thus far do not consider surface diffusion, but recent theoretical results, founded on quantum-mechanical calculations and localized kinetic analysis, highlight the critical role that surface migration may play in growth of diamond films. In this paper we report a three-dimensional time-dependent Monte Carlo simulations of diamond growth which consider adsorption, desorption, lattice incorporation, and surface migration. The reaction mechanism includes seven gas-surface, four surface migration, and two surface-only reaction steps. The reaction probabilities are founded on the results of quantum-chemical and transition-state-theory calculations. The kinetic Monte Carlo simulations show that, starting with an ideal {100}-(2×1) reconstructed diamond surface, the model is able to produce a continuous film growth. The smoothness of the growing film and the developing morphology are shown to be influenced by rate parameter values and by deposition conditions such as temperature and gaseous species concentrations.

Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. F. Egler ◽  
N. Otsuka ◽  
K. Mahalingam
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Singular Surface ◽  
Sticking Coefficient ◽  
Singular Surfaces ◽  
Vicinal Surfaces ◽  
Kinetics Of ◽  
Multiple Configurations

ABSTRACTGrowth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Surface Migration of Adsorbed Particles

1986 ◽  
Vol 136 (2) ◽  
pp. 557-565 ◽  
Author(s):  
M. A. Kozhushner ◽  
A. S. Prostnev ◽  
M. O. Rozovskii ◽  
B. R. Shub
Keyword(s):  
Surface Migration

Island formation in chemisorption 1. Chemisorption model

1998 ◽  
Vol 64 (2) ◽  
pp. 261-268 ◽  
Author(s):  
A. N. Salanov ◽  
V. N. Bibin ◽  
N. A. Rudina
Keyword(s):  
Island Formation ◽  
Chemisorption Model

1.23 Granulation and surface migration in germanium films by heat treatment

Vacuum ◽  
1967 ◽  
Vol 17 (6) ◽  
pp. 333
Author(s):  
A Devenyi ◽  
A Barna ◽  
PB Barna
Keyword(s):  
Heat Treatment ◽  
Surface Migration ◽  
Germanium Films

Study on the Kinetics of Surface Migration of Surface Modifying Macromolecules in Membrane Preparation

2002 ◽  
Vol 35 (8) ◽  
pp. 3017-3021 ◽  
Author(s):  
Daniel Eumine Suk ◽  
Geeta Chowdhury ◽  
Takeshi Matsuura ◽  
Roberto Martin Narbaitz ◽  
Paul Santerre ◽  
...  
Keyword(s):  
Membrane Preparation ◽  
Surface Migration ◽  
Kinetics Of
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