Island formation in chemisorption 1. Chemisorption model

1998 ◽  
Vol 64 (2) ◽  
pp. 261-268 ◽  
Author(s):  
A. N. Salanov ◽  
V. N. Bibin ◽  
N. A. Rudina
Keyword(s):  
Island Formation ◽  
Chemisorption Model

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Atomic force microscope studies of CuCl island formation on CaF2(111) substrates

1992 ◽  
Vol 277 (3) ◽  
pp. L63-L69
Author(s):  
William M. Tong ◽  
Eric J. Snyder ◽  
R. Stanley Williams ◽  
Akihisa Yanase ◽  
Yusaburo Segawa ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Island Formation ◽  
Atomic Force

scholarly journals Modeling of magnetic island formation in magnetic reconnection experiment

1999 ◽  
Vol 6 (4) ◽  
pp. 1253-1257 ◽  
Author(s):  
T.-H. Watanabe ◽  
T. Hayashi ◽  
T. Sato ◽  
M. Yamada ◽  
H. Ji
Keyword(s):  
Magnetic Reconnection ◽  
Magnetic Island ◽  
Island Formation
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