scholarly journals Intracavity C atom absorption in the tuning range of the ArF excimer laser

1992 ◽  
Vol 96 (4) ◽  
pp. 3350-3351 ◽  
Author(s):  
Michel Versluis ◽  
Gerard Meijer
Keyword(s):  
Excimer Laser ◽  
Tuning Range ◽  
Arf Excimer Laser ◽  
Atom Absorption

Frequency calibration in the ArF excimer laser-tuning range using laser-induced fluorescence of NO

1991 ◽  
Vol 30 (36) ◽  
pp. 5229 ◽  
Author(s):  
Michel Versluis ◽  
Maarten Ebben ◽  
Marcel Drabbels ◽  
J. J. ter Meulen
Keyword(s):  
Excimer Laser ◽  
Tuning Range ◽  
Laser Induced Fluorescence ◽  
Arf Excimer Laser ◽  
Frequency Calibration ◽  
Laser Tuning

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

1998 ◽  
Vol 72 (12) ◽  
pp. 1472-1474 ◽  
Author(s):  
Takashi Sugino ◽  
Hideaki Ninomiya ◽  
Junji Shirafuji ◽  
Koichiro Matsuda
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser

Transmission of corneal collagen during arf excimer laser ablation

1993 ◽  
Vol 13 (2) ◽  
pp. 204-210 ◽  
Author(s):  
M. N. Ediger ◽  
G. H. Pettit ◽  
R. P. Weiblinger ◽  
C. H. Chen
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Arf Excimer Laser ◽  
Corneal Collagen

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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