NREL/industry interaction: Amorphous silicon alloy research team formation

1994 ◽  
Author(s):  
Werner Luft
1998 ◽  
Vol 507 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Banerjee ◽  
S. Sugiyama

ABSTRACTTwo significant developments took place in 1997 in the field of amorphous silicon alloy photovoltaic technology. First, a world record stable cell efficiency of 13% was demonstrated using a spectral-splitting, triple-junction structure. Second, a triple-junction photovoltaic manufacturing facility of an annual capacity of 5 MW was commissioned. In order to make the transition from R&D to production, critical material issues and deposition methods which ensure the lowest module cost per delivered watt needed to be evaluated. In this paper, we discuss some of these issues with special reference to the cell materials.


1998 ◽  
Vol 507 ◽  
Author(s):  
J. Yang ◽  
S. Sugiyama ◽  
S. Guha

ABSTRACTWe have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.


1990 ◽  
Vol 192 ◽  
Author(s):  
A. Banerjee ◽  
S. Guha

ABSTRACTA two-layer MgF2/ITO antireflection (AR) coating has been used to reduce the reflection losses from the surface of a hydrogenated amorphous silicon alloy solar cell. This has resulted in a higher efficiency device primarily due to an improved blue response. The relative thicknesses of the MgF2 and ITO layers have been tailored to give the highest overall quantum efficiency (Q) values, which are higher than that obtained with a single-layer antireflection coating. Typically, the 0 value at 400 nm (Q400) has been increased from 0.58 to 0.68 for a single a:SiH cell. Incorporation of the double-layer AR coating in conjunction with μc-SiC p-layer has yielded Q400 value of 0.77. The total current density obtained by adding the individual contribution of the component cells of a dual bandgap triple amorphous silicon alloy solar cell has been increased from 21.90 to 23.27 mA/cm2 using the double-layer AR coating.


Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  

1989 ◽  
Vol 54 (23) ◽  
pp. 2330-2332 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  

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