Improved Blue Response of Amorphous Silicon Alloy Solar Cells

1990 ◽  
Vol 192 ◽  
Author(s):  
A. Banerjee ◽  
S. Guha

ABSTRACTA two-layer MgF2/ITO antireflection (AR) coating has been used to reduce the reflection losses from the surface of a hydrogenated amorphous silicon alloy solar cell. This has resulted in a higher efficiency device primarily due to an improved blue response. The relative thicknesses of the MgF2 and ITO layers have been tailored to give the highest overall quantum efficiency (Q) values, which are higher than that obtained with a single-layer antireflection coating. Typically, the 0 value at 400 nm (Q400) has been increased from 0.58 to 0.68 for a single a:SiH cell. Incorporation of the double-layer AR coating in conjunction with μc-SiC p-layer has yielded Q400 value of 0.77. The total current density obtained by adding the individual contribution of the component cells of a dual bandgap triple amorphous silicon alloy solar cell has been increased from 21.90 to 23.27 mA/cm2 using the double-layer AR coating.

2012 ◽  
Vol 11 (01) ◽  
pp. 1250008 ◽  
Author(s):  
Y. CHEN ◽  
J. C. ZHOU ◽  
B. X. ZHAO ◽  
J. J. SUN

TiO2 films were prepared by the magnetron sputter system with various oxygen partial pressure ratios, for the application of photovoltaic (PV) cells, TiO2 single-layer and SiO2/TiO2 double-layer antireflection (AR) coatings were deposited on Si substrate. The experimental results indicate that TiO2 film deposited at oxygen partial pressure ratio of 15.4% exhibits smooth surface morphology, amorphous structure, and good optical transmittance, which is suitable for AR coating in the PV cell structure system. Furthermore, the weighted average reflectance in the range of 400–900 nm was about 10.3% and 3.7% for the TiO2 single-layer and SiO2/TiO2 double-layer AR coatings, respectively. With a double-layer AR coating, a 50.8% improvement in the efficiency of a Si PV cell was achieved.


1996 ◽  
Vol 452 ◽  
Author(s):  
M. Goetz ◽  
P. Torres ◽  
P. Pernet ◽  
J. Meier ◽  
D. Fischer ◽  
...  

AbstractThe first successful deposition of ‘micromorph’ silicon tandem solar cells of the n-i-p-n-i-p configuration is reported. In order to implement the ‘micromorph’ solar cell concept, four key elements had to be prepared: First, the deposition of mid-gap, intrinsic microcrystalline silicon (μc-Si:H) by the 'gas purifier method', second, the amorphous silicon (a-Si:H) n-i-p single junction solar cell, third, the microcrystalline silicon n-i-p single junction solar cell and fourth, the ability of depositing on aluminium sheet substrates.All the solar cells presented have been deposited on flat aluminium sheets, using a single layer antireflection coating to couple the light into the cell. It is shown, that this antireflection concept- together with a flat substrate- holds for amorphous single junction solar cells, but it reaches its limit with the extended range of spectral response of the ‘micromorph’ cell.The best initial efficiencies for each category of n-i-p cells on flat substrates were: 8.7% for the amorphous silicon single junction cell, 4.9% for the microcrystalline silicon single junction cell and 9.25% for the ‘micromorph’ tandem cell.


2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.


2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hyukyong Kwon ◽  
Jaedoo Lee ◽  
Minjeong Kim ◽  
Soohong Lee

Solar cell is device that directly converts the energy of solar radiation to electrical energy. So it is important for solar cell to reduce the surface reflection of light in order to improve the efficiency of the device. Texturing and antireflection coating have been used to reduce the reflection of light. Texturing technology has reduced the 10% of incident light. However, there are a few disadvantages of random pyramid texturing that the results are not always reproducible in an industrial environment. And AR coating (MgF2, ZnS) is difficult to apply the standard industrial process because high vacuum is needed and the expense is very heavy. This paper investigates the formation of a thin film of porous silicon on the surface of crystalline silicon substrate without other AR coating layers. The formation of the porous silicon layer was measured with SEM (scanning electron microscopy). The formation of porous silicon layers on the textured silicon wafer resulted in lower than 5% of reflectance in the wavelength region from 400 to 1000 nm.


1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.


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