Band‐gap profiling for improving the efficiency of amorphous silicon alloy solar cells

1989 ◽  
Vol 54 (23) ◽  
pp. 2330-2332 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Alloy

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

Optimum band gap for amorphous silicon based solar cells

2002 ◽  
Author(s):  
P. Fiorini ◽  
A. Mittiga ◽  
I. Chambouleyron ◽  
F. Evangelisti
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Based

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

2004 ◽  
Vol 81 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
Francisco A. Rubinelli ◽  
Wim M. Arnoldbik ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Experimental Verification ◽  
Silicon Germanium ◽  
Band Gap Engineering ◽  
Computer Aided ◽  
Amorphous Silicon Germanium

Effect of Excitation Frequency on the Performance of Amorphous Silicon Alloy Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Yang ◽  
S. Sugiyama ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Excitation Frequency ◽  
Deposition Rates ◽  
Solar Cell Performance ◽  
Single Junction ◽  
Silicon Alloy ◽  
Double Junction ◽  
Junction Structure

ABSTRACTWe have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.

A novel design for amorphous silicon alloy solar cells

1988 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Alloy ◽  
Novel Design

a-SiGe:H Alloy and its Application to Tandem-Type Solar Cell

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Yukimoto ◽  
M. Aiga
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Cell Size ◽  
Conversion Efficiency ◽  
High Conversion ◽  
High Conversion Efficiency ◽  
Silicon Alloy

ABSTRACTAmorphous SiGe:H alloy is the key material in achieving high conversion efficiency with tandem-type amorphous silicon alloy solar cells. Status and issues for this key material are discussed, and efforts made to irprove it are reviewed to obtain directions for higher quality a-SiGe:H alloys. An application of the improved alloy to tandem-type solar cell to achieve 9.6% efficiency for the cell size of 100 cm2 is reported.

Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Sugiyama ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
The Other ◽  
Silicon Alloy ◽  
Improved Stability ◽  
The Stability ◽  
Microstructure Of The Material ◽  
Hydrogen Effusion

ABSTRACTWe have studied light-induced degradation in hydrogenated and deuterated amorphous silicon alloy solar cells in which intrinsic layers were deposited by using SiH4+H2 and SiD4+D2 gas mixtures respectively. Replacing hydrogen with deuterium in the intrinsic layer of the cell improves stability against light exposure. On the other hand, cells in which intrinsic layers were deposited from SiD4+H2 and SiH4+D2 do not show any improvement in stability. This result shows that improved stability in deuterated cell does not originate from simple replacement of hydrogen with deuterium. From deuterium/hydrogen effusion measurements, we found similar effusion at low temperature (400 °C) in both deuterated film and hydrogenated film prepared with heavy dilution. The latter film was shown to have oriented microstructure which was correlated with higher stability. This correlation strongly indicates that microstructure of the material plays a key role in improving the stability.

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