Thomas–Fermi–Dirac‐jellium model of the metal surface: Change of surface potential with charge

1987 ◽  
Vol 86 (2) ◽  
pp. 882-886 ◽  
Author(s):  
Jerry Goodisman
1987 ◽  
Vol 95 ◽  
Author(s):  
S. A. Cruz ◽  
V. M. Mendez-Rosales

AbstractWe calculate the average surface potential barrier for incorporation of H, Si, SiHb (n=1–4) into films of a-Si:H as well as crystalline Si(111) surfaces. In the first case a local amorphous configuration for the surface is employed through a representative cluster(Si29 H1 0 ) forming 5, 6, 7 Si atom rings. For the crystalline surface, several layers of Si atoms are considered. Pairwise superposition of combined Morse and Thomas-Fermi-Moliére interatomic potentials is assumed for the total interaction between the incoming species and the surface.


2007 ◽  
Vol 43 (1-3) ◽  
pp. 247-250
Author(s):  
L.-L. Wang ◽  
H.-P. Cheng
Keyword(s):  

Author(s):  
L.E. Murr ◽  
V. Annamalai

Georgius Agricola in 1556 in his classical book, “De Re Metallica”, mentioned a strange water drawn from a mine shaft near Schmölnitz in Hungary that eroded iron and turned it into copper. This precipitation (or cementation) of copper on iron was employed as a commercial technique for producing copper at the Rio Tinto Mines in Spain in the 16th Century, and it continues today to account for as much as 15 percent of the copper produced by several U.S. copper companies.In addition to the Cu/Fe system, many other similar heterogeneous, electrochemical reactions can occur where ions from solution are reduced to metal on a more electropositive metal surface. In the case of copper precipitation from solution, aluminum is also an interesting system because of economic, environmental (ecological) and energy considerations. In studies of copper cementation on aluminum as an alternative to the historical Cu/Fe system, it was noticed that the two systems (Cu/Fe and Cu/Al) were kinetically very different, and that this difference was due in large part to differences in the structure of the residual, cement-copper deposit.


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