Investigation of the surface potential formed in Alq3 films on metal surface by Kelvin probe and nonlinear optical measurement

2006 ◽  
Vol 6 (5) ◽  
pp. 877-881 ◽  
Author(s):  
Takaaki Manaka ◽  
Kei Yoshizaki ◽  
Mitsumasa Iwamoto
2009 ◽  
Vol 154 ◽  
pp. 95-100 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
K. Shimanoe ◽  
R. Matsumoto

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.


1972 ◽  
Vol 11 (9) ◽  
pp. 2103 ◽  
Author(s):  
R. S. Finn ◽  
J. F. Ward

2013 ◽  
Vol 749 ◽  
pp. 648-653
Author(s):  
Jin Peng Xie ◽  
Hong Yun Luo ◽  
Jin Long Lv

Local electrochemical technique was used to measure the impedance of austenite in AISI 304 stainless steel under tensile strain of 0%, 10%, 20%, 30%, 40%. Scanning Kelvin probe (SKP) technique was used to measure the potential distribution of the surface. The results showed that the impedance of the austenite declined with the increase of the strain and declined sharply under the strain of 30%. Potential of austenite decreased non-monotonously with increase of the strain. The potential reached the minimum under strain of 30% and then increased. Through the transmission electron microscope (TEM) results, plane dislocation pile-ups were observed in the grain boundary under the strain of 30% and transformed to cellular substructure structure and cell wall under 40%. Combined with the results of local electrochemistry impedance spectroscopy (LEIS) and surface potential, it may be concluded that it was the dislocation density and dislocation structure influence the impedance spectroscopy significantly, while surface potential was sensitive to the dislocation structure.


2020 ◽  
Vol 11 ◽  
pp. 911-921
Author(s):  
Christian Ritz ◽  
Tino Wagner ◽  
Andreas Stemmer

Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated. The resulting electrostatic force or force gradient is detected via lock-in techniques and canceled by adjusting the dc component of the tip–sample bias. This allows for an electrostatic characterization and simultaneously minimizes the electrostatic influence onto the topography measurement. However, a static contribution due to the bias modulation itself remains uncompensated, which can induce topographic height errors. Here, we demonstrate an alternative approach to find the surface potential without lock-in detection. Our method operates directly on the frequency-shift signal measured in frequency-modulated atomic force microscopy and continuously estimates the electrostatic influence due to the applied voltage modulation. This results in a continuous measurement of the local surface potential, the capacitance gradient, and the frequency shift induced by surface topography. In contrast to conventional techniques, the detection of the topography-induced frequency shift enables the compensation of all electrostatic influences, including the component arising from the bias modulation. This constitutes an important improvement over conventional techniques and paves the way for more reliable and accurate measurements of electrostatics and topography.


Langmuir ◽  
1994 ◽  
Vol 10 (2) ◽  
pp. 597-601 ◽  
Author(s):  
M. T. Nguyen ◽  
K. Keiji Kanazawa ◽  
P. Brock ◽  
A. F. Diaz ◽  
Shelgon Yee

1999 ◽  
Vol 70 (8) ◽  
pp. 3418-3424 ◽  
Author(s):  
I. R. Peterson

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