High sensitivity, high‐resolution IR laser spectroscopy in slit supersonic jets: Application to N2HF ν1and ν5+ν1−ν5

1987 ◽  
Vol 86 (6) ◽  
pp. 3151-3165 ◽  
Author(s):  
Christopher M. Lovejoy ◽  
David J. Nesbitt
1998 ◽  
Vol T78 (1) ◽  
pp. 24 ◽  
Author(s):  
H. von Busch ◽  
W. Demtr?der ◽  
Vas Dev ◽  
H.-A. Eckel ◽  
R. Gro?klo? ◽  
...  

1999 ◽  
Vol 59 (2) ◽  
pp. 147-151
Author(s):  
H von Busch ◽  
W Demtröder ◽  
Vas Dev ◽  
H-A Eckel ◽  
R Großkloß ◽  
...  

Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.


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