High Resolution and High Sensitivity Laser Spectroscopy of Small Molecules and Clusters

1999 ◽  
Vol 59 (2) ◽  
pp. 147-151
Author(s):  
H von Busch ◽  
W Demtröder ◽  
Vas Dev ◽  
H-A Eckel ◽  
R Großkloß ◽  
...  
1998 ◽  
Vol T78 (1) ◽  
pp. 24 ◽  
Author(s):  
H. von Busch ◽  
W. Demtr?der ◽  
Vas Dev ◽  
H.-A. Eckel ◽  
R. Gro?klo? ◽  
...  

1983 ◽  
pp. 447-466
Author(s):  
W. Demtröder ◽  
D. Eisel ◽  
H. J. Foth ◽  
M. Raab ◽  
H. J. Vedder ◽  
...  

Author(s):  
W. Demtröder ◽  
D. Eisel ◽  
H. J. Foth ◽  
G. Höning ◽  
M. Raab ◽  
...  

1991 ◽  
Vol 11 (3-4) ◽  
pp. 209-223 ◽  
Author(s):  
V. Beutel ◽  
H.-J. Böhm ◽  
W. Demtröder ◽  
H.-A. Eckel ◽  
J. Gress ◽  
...  

The combination of high resolution laser spectroscopy in collimated cold molecular beams with mass selective detection allows investigations of rotationally resolved molecular spectra of selected molecular species in the presence of molecules with overlapping absorption spectra. This is illustrated by some examples, such as the isotope selective spectroscopy of Ag2–dimers or the sub-Doppler spectroscopy of Na3 in supersonic beam with a broad mass distribution of different clusters. Time resolved laser spectroscopy of excited states of alkali molecules, perturbed by bound dark states or by repulsive states, yields information about singlet–triplet mixing and predissociation rates.


Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.


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