Determination of the critical thickness for the onset of porosity in pulsed-laser deposited thin films of MoS2

1993 ◽  
Author(s):  
S. D. Walck ◽  
J. S. Zabinski ◽  
M. S. Donley ◽  
A. E. Day ◽  
J. E. Bultman
Keyword(s):  
Thin Films ◽  
Critical Thickness ◽  
Pulsed Laser

Critical thickness of YBaCuO (123) strained thin films and superlattices grown by pulsed laser deposition

1996 ◽  
Vol 96-98 ◽  
pp. 703-707 ◽  
Author(s):  
A. Abert ◽  
J.P Contour ◽  
A. De´fossez ◽  
D. Ravelosona ◽  
W. Schwegle ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Critical Thickness ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxy of YBa2Cu3O7-xon Silicon on Sapphire: Possibilities and Limits

1994 ◽  
Vol 341 ◽  
Author(s):  
C. A. Copetti ◽  
F. Wang ◽  
J. Schubert ◽  
H. Schulz ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Critical Thickness ◽  
Pulsed Laser ◽  
Growth Characteristics ◽  
Laser Deposition ◽  
Buffer System ◽  
Dc Sputtering

AbstractWe present investigations of YBa2Cu3O7-x, thin films deposited on Silicon on Sapphire (SoS) substrates by pulsed laser deposition and dc sputtering. A compound buffer system consisting of YSZ and CeO2 is used for improved YBa2Cu3O7-x growth characteristics. The critical thickness of YBa2Cu3O7-x on CeO2/YSZ/SoS is determined to be 280 nm.

Critical thickness of YBaCuO (123) strained thin films and superlattices grown by pulsed laser deposition

1996 ◽  
pp. 703-707
Author(s):  
A. Abert ◽  
J.P. Contour ◽  
A. Défossez ◽  
D. Ravelosona ◽  
W. Schwegle ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Critical Thickness ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Determination of Oxygen Content in Pulsed Laser Deposited InN Thin Films with Analytical Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 1316-1317
Author(s):  
G Drazic ◽  
E Sarantopoulou ◽  
Z Kollia ◽  
A-C Cefalas ◽  
S Kobe
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Oxygen Content ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Analytical Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

2011 ◽  
Vol 21 (7) ◽  
pp. 074008 ◽  
Author(s):  
H Nazeer ◽  
M D Nguyen ◽  
L A Woldering ◽  
L Abelmann ◽  
G Rijnders ◽  
...  
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Pulsed Laser ◽  
Pzt Thin Films

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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