Paramagnetic center in irradiated hydrazinium sulfate (N2H6SO4) crystals

1981 ◽  
Vol 75 (9) ◽  
pp. 4742-4743 ◽  
Author(s):  
S. Gade ◽  
B. Johnson ◽  
K. Hendrich ◽  
R. Knispel ◽  
J. W. Harrell
Keyword(s):  
Paramagnetic Center

A new paramagnetic center in electron irradiated silicon

1963 ◽  
Vol 24 (1) ◽  
pp. 1-6 ◽  
Author(s):  
G. Bemski ◽  
B. Szymanski ◽  
K. Wright
Keyword(s):  
Paramagnetic Center

ON THE HUNT FOR THE MOST EFFICIENT PARAMAGNETIC CENTER FOR THE DNP PROCESS

2002 ◽  
Author(s):  
ST. GOERTZ ◽  
JÖRG HARMSEN ◽  
JÖRG HECKMANN ◽  
W. MEYER ◽  
A. NÜRENBERG ◽  
...  
Keyword(s):  
Paramagnetic Center

New Paramagnetic Center in Cu-Doped Y-Stabilized ZrO2

2020 ◽  
Vol 9 (3) ◽  
pp. 033002
Author(s):  
Igor P. Vorona ◽  
Valentyna V. Nosenko ◽  
Vladimir O. Golub ◽  
Sergii M. Okulov ◽  
Larysa Yu. Khomenkova ◽  
...  
Keyword(s):  
Paramagnetic Center

EPR of complex paramagnetic center in YBa2Cu3O7-γ induced and suppressed by mechanical processing

1991 ◽  
Vol 77 (2) ◽  
pp. 125-128 ◽  
Author(s):  
J. Stankowski ◽  
W. Hilczer ◽  
J. Baszyński ◽  
B. Czyżak ◽  
L. Szczepańska
Keyword(s):  
Paramagnetic Center ◽  
Mechanical Processing

ENDOR Study on the Dynamic Properties of the First Stable Paramagnetic Center in γ-Irradiatedl-Alanine Crystals

2010 ◽  
Vol 114 (28) ◽  
pp. 7500-7505 ◽  
Author(s):  
Boris Rakvin ◽  
Nadica Maltar-Strmečki ◽  
Daniel Kattnig ◽  
Günter Grampp
Keyword(s):  
Paramagnetic Center ◽  
Dynamic Properties

Aliphatic semidiones. IX. Hyperfine splittings by nitrogen atoms attached to a paramagnetic center

1968 ◽  
Vol 72 (4) ◽  
pp. 1386-1387 ◽  
Author(s):  
Glen Allan Russell ◽  
John J. McDonnell ◽  
Charles Myers
Keyword(s):  
Paramagnetic Center ◽  
Hyperfine Splittings

Study of a paramagnetic center on an SiO-treated GaAs surface

1993 ◽  
Vol 72 ◽  
pp. 161-164 ◽  
Author(s):  
G.J. Gerardi ◽  
F.C. Rong ◽  
E.H. Poindexter ◽  
M. Harmatz ◽  
H. Shen ◽  
...  
Keyword(s):  
Paramagnetic Center ◽  
Gaas Surface

Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films

1999 ◽  
Vol 592 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda ◽  
E. Hasegawa
Keyword(s):  
Paramagnetic Center ◽  
Vacuum Ultraviolet ◽  
Positive Charge ◽  
Silicon Oxynitride ◽  
Paramagnetic Centers ◽  
Zero Crossing ◽  
Charge Center ◽  
Spin Resonance ◽  
New Type ◽  
G Value

ABSTRACTElectron spin resonance (ESR) spectroscopy is used to explore the origin of positive charges in silicon oxynitride thin films formed in a N2O ambient. A new type of paramagnetic center in as-grown oxynitrides appeared as a single peak in the ESR spectrum with a zero crossing g value of 2.0006. This value suggests that the paramragnetic center is a kind of E' center. We investigated the quantitative behavior of the positive charge center and the paramagnetic center through the density changes induced by vacuum ultraviolet irradiation and hydrogen annealing. Based on the similar behavior of both types of center, we argue that the paramagnetic centers can account for a significant part of the positive charges specific to oxynitrides. Since the spin density increased with the oxynitridation temperature, the paramagnetic center is closely related to nitrogen incorporation processes.

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