Self‐consistent, nonorthogonal group function approximation for polyatomic systems. II. Analysis of noncovalent interactions

1981 ◽  
Vol 74 (11) ◽  
pp. 6298-6306 ◽  
Author(s):  
Ernest L. Mehler
VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 469-473
Author(s):  
Andrea Reale ◽  
Aldo Di Carlo ◽  
Sara Pescetelli ◽  
Marco Paciotti ◽  
Paolo Lugli

A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.


1997 ◽  
Vol 491 ◽  
Author(s):  
Aldo Di Carlo

ABSTRACTA self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.


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