Self-consistent, nonorthogonal group function approximation for polyatomic systems. I. Closed shells

1977 ◽  
Vol 67 (6) ◽  
pp. 2728 ◽  
Author(s):  
Ernest L. Mehler
Keyword(s):  
Function Approximation ◽  
Group Function ◽  
Self Consistent ◽  
Polyatomic Systems ◽  
Closed Shells

MICROSCOPIC SELF-CONSISTENT AND COLLECTIVE MODEL DESCRIPTION OF LOW-ENERGY NUCLEAR STRUCTURE

1989 ◽  
Vol 04 (09) ◽  
pp. 2063-2146 ◽  
Author(s):  
K. HEYDE
Keyword(s):  
Nuclear Structure ◽  
Degrees Of Freedom ◽  
Collective Motion ◽  
Collective Model ◽  
Model Description ◽  
Mixed Symmetry ◽  
Self Consistent ◽  
Closed Shells ◽  
Model Approach

In the present review, an attempt is made to approach the different facets of the nucleus at low excitation energy from both a microscopic, self-consistent and a collective model approach. Some attention is given on how to relate the two “opposite” approaches to nuclear structure. In a final chapter, we discuss some newly appreciated modes in the nucleus that are specific to the proton and neutron degrees of freedom e.g. the study of intruder states near closed shells and the presence of proton-neutron mixed-symmetry collective motion.

scholarly journals Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 469-473
Author(s):  
Andrea Reale ◽  
Aldo Di Carlo ◽  
Sara Pescetelli ◽  
Marco Paciotti ◽  
Paolo Lugli
Keyword(s):  
Optical Properties ◽  
Electronic Properties ◽  
Function Approximation ◽  
Tight Binding ◽  
The Self ◽  
Optical And Electronic Properties ◽  
Self Consistent ◽  
Binding Models ◽  
Band Profile ◽  
Band Mixing

A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.

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