Temperature dependence of the solvated electron optical absorption band in liquid propane: Comparison of theory and experiment

1978 ◽  
Vol 68 (11) ◽  
pp. 5203-5205 ◽  
Author(s):  
Larry Kevan ◽  
Hugh A. Gillis ◽  
Kenji Fueki ◽  
Toyoaki Kimura
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Solvated Electron ◽  
Liquid Propane ◽  
Optical Absorption Band ◽  
Theory And Experiment

Article

1998 ◽  
Vol 76 (4) ◽  
pp. 411-413
Author(s):  
Yixing Zhao ◽  
Gordon R Freeman
Keyword(s):  
Absorption Spectrum ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Optical Absorption Spectrum ◽  
Infrared Light ◽  
Solvated Electron ◽  
Solvated Electrons ◽  
Tert Butanol ◽  
Solvent Dependence ◽  
Increasing Temperature

The energy and asymmetry of the optical absorption spectrum of solvated electrons, es- , change in a nonlinear fashion on changing the solvent through the series HOH, CH3OH, CH3CH3OH, (CH3)2CHOH, (CH3)3COH. The ultimate, quantum-statistical mechanical, interpretation of solvated electron spectra is needed to describe the solvent dependence. The previously reported optical spectrum of es- in tert-butanol was somewhat inaccurate, due to a small amount of water in the alcohol and to limitations of the infrared light detector. The present note records the remeasured spectrum and its temperature dependence. The value of the energy at the absorption maximum (EAmax) is 155 zJ (0.97 eV) at 299 K and 112 zJ (0.70 eV) at 338 K; the corresponding values of G epsilon max (10-22 m2 aJ-1) are 1.06 and 0.74. These unusually large changes are attributed to the abnormally rapid decrease of dielectric permittivity of tert-butanol with increasing temperature. The band asymmetry at 299 K is Wb/Wr = 1.8.Key words: optical absorption spectrum, solvated electron, solvent effects, tert-butanol, temperature dependence.

scholarly journals Photocatalytic NO removal over calcium-bridged siloxenes under ultraviolet and visible light irradiation

2018 ◽  
Vol 47 (20) ◽  
pp. 7070-7076 ◽  
Author(s):  
Haruo Imagawa ◽  
Xiaoyong Wu ◽  
Hiroshi Itahara ◽  
Shu Yin ◽  
Kazunobu Kojima ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Absorption Band ◽  
Optical Absorption ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Light Irradiation ◽  
Ultraviolet Region ◽  
No Removal ◽  
Optical Absorption Band

Ca-Bridged siloxenes with a wide optical absorption band from the visible to ultraviolet region exhibited photocatalytic activity for NO removal.

Optical absorption band edge of single crystal β-GeSe2

1985 ◽  
Vol 110 (7-8) ◽  
pp. 426-428 ◽  
Author(s):  
Zoran V. Popović ◽  
A. Breitschwerdt
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Single Crystal ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Optical Absorption Band

Properties of Nano-layers of Nanoclusters of Ag in SiO2 Host produced by MeV Si ion bombardment

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Bulk Material ◽  
Ion Bombardment ◽  
Optical Absorption Band ◽  
Before And After

AbstractWe prepared 50 periodic nano-layers of SiO2/AgxSiO2(1-x). The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanoclusters. Our previous work showed that these nanoclusters have crystallinity similar to the bulk material. Nanocrystals of Ag in silica produce an optical absorption band at about 420 nm. Due to the interaction of nanocrystals between sequential nanolayers there is widening of the absorption band. The electrical and thermal properties of the layered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals in layers of SiO2 containing few percent of Ag. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

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